Datasheets
STB45NF06T4 by: STMicroelectronics

N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package

Part Details for STB45NF06T4 by STMicroelectronics

Overview of STB45NF06T4 by STMicroelectronics

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Price & Stock for STB45NF06T4

Part # Distributor Description Stock Price Buy
DISTI # 57P0615
Newark Lv Mosfet Planar & Old |Stmicroelectronics STB45NF06T4 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 79AH6931
Newark Stpower N-Channel Mosfets > 30 V To 350 V Rohs Compliant: Yes |Stmicroelectronics STB45NF06T4 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.9680
  • 3,000 $0.9290
  • 6,000 $0.8450
  • 12,000 $0.7600
  • 18,000 $0.7320
  • 30,000 $0.7150
$0.7150 / $0.9680 Buy Now
DISTI # 497-10314-1-ND
DigiKey MOSFET N-CH 60V 38A D2PAK Min Qty: 1 Lead time: 39 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Limited Supply - Call
  • 1,000 $0.7958
  • 2,000 $0.7560
  • 5,000 $0.7276
  • 10,000 $0.7035
$0.7035 / $0.7958 Buy Now
DISTI # STB45NF06T4
Avnet Americas Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB45NF06T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $0.8358
  • 2,000 $0.8189
  • 4,000 $0.8020
  • 6,000 $0.7851
  • 8,000 $0.7682
  • 10,000 $0.7513
  • 100,000 $0.7345
$0.7345 / $0.8358 Buy Now
STMicroelectronics N-Channel 60V - 0.022 Ohm - 38A D2PAK STripFET II MOSFET RoHS: Compliant Min Qty: 1 0
  • 1 $1.6500
  • 10 $1.3700
  • 100 $1.0900
  • 250 $1.0100
  • 500 $0.9100
$0.9100 / $1.6500 Buy Now
Future Electronics N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET™ Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $0.7700
  • 2,000 $0.7500
  • 3,000 $0.7400
  • 4,000 $0.7350
  • 5,000 $0.7150
$0.7150 / $0.7700 Buy Now
Future Electronics N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET™ Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $0.7700
  • 2,000 $0.7500
  • 3,000 $0.7400
  • 4,000 $0.7350
  • 5,000 $0.7150
$0.7150 / $0.7700 Buy Now
DISTI # STB45NF06T4
Avnet Americas Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB45NF06T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $0.8358
  • 2,000 $0.8189
  • 4,000 $0.8020
  • 6,000 $0.7851
  • 8,000 $0.7682
  • 10,000 $0.7513
  • 100,000 $0.7345
$0.7345 / $0.8358 Buy Now
DISTI # STB45NF06T4
Avnet Americas Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB45NF06T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $0.8358
  • 2,000 $0.8189
  • 4,000 $0.8020
  • 6,000 $0.7851
  • 8,000 $0.7682
  • 10,000 $0.7513
  • 100,000 $0.7345
$0.7345 / $0.8358 Buy Now
Velocity Electronics Our Stock 2419
RFQ
DISTI # STB45NF06T4
Avnet Silica Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) D2PAK T/R (Alt: STB45NF06T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
DISTI # STB45NF06T4
EBV Elektronik Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) D2PAK T/R (Alt: STB45NF06T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 5 Weeks, 5 Days EBV - 1000
Buy Now
DISTI # 1751998
Farnell MOSFET, N CH, 60V, 38A, D2PAK RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1 $0.4103
  • 25 $0.4040
  • 100 $0.3977
  • 250 $0.3927
  • 500 $0.3864
  • 3,000 $0.3802
  • 7,000 $0.3739
$0.3739 / $0.4103 Buy Now

Part Details for STB45NF06T4

STB45NF06T4 CAD Models

STB45NF06T4 Part Data Attributes

STB45NF06T4 STMicroelectronics
Buy Now Datasheet
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STB45NF06T4 STMicroelectronics N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer STMICROELECTRONICS
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 135 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 80 W
Pulsed Drain Current-Max (IDM) 152 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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