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Part Details for STB80NF55-06-1 by STMicroelectronics
Overview of STB80NF55-06-1 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STB80NF55-06-1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57P0645
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Newark | Lv Mosfet Planar & Old |Stmicroelectronics STB80NF55-06-1 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
STB80NF55-06-1
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Avnet Americas | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) I2PAK Tube - Rail/Tube (Alt: STB80NF55-06-1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ | |
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STMicroelectronics | N-channel 55 V, 5 mOhm, 80 A I2PAK STripFET(TM) II Power MOSFET RoHS: Compliant Min Qty: 1 | 948 |
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$1.6600 / $2.7200 | Buy Now |
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DISTI #
STB80NF55-06-1
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Avnet Americas | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) I2PAK Tube - Rail/Tube (Alt: STB80NF55-06-1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 55V 80A I2PAK / Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) I2PAK Tube | 12000 |
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RFQ |
Part Details for STB80NF55-06-1
STB80NF55-06-1 CAD Models
STB80NF55-06-1 Part Data Attributes:
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STB80NF55-06-1
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB80NF55-06-1
STMicroelectronics
N-channel 55 V, 5 mOhm, 80 A I2PAK STripFET(TM) II Power MOSFET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-262AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 1300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 210 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB80NF55-06-1
This table gives cross-reference parts and alternative options found for STB80NF55-06-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB80NF55-06-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | STB80NF55-06-1 vs NDB706AL |
| IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STB80NF55-06-1 vs IRFS620 |
| FQA30N40 | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | STB80NF55-06-1 vs FQA30N40 |
| IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | STB80NF55-06-1 vs IPD90N06S306ATMA1 |
| STP4NK60Z | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STMicroelectronics | STB80NF55-06-1 vs STP4NK60Z |
| SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB80NF55-06-1 vs SPB80N06S2-07 |
| IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | STB80NF55-06-1 vs IXFH30N40Q |
| SSH60N08 | Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | STB80NF55-06-1 vs SSH60N08 |
| NDP605BE | TRANSISTOR 42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | National Semiconductor Corporation | STB80NF55-06-1 vs NDP605BE |
| STW29NK50Z | 31A, 500V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | STB80NF55-06-1 vs STW29NK50Z |