Datasheets
STB85NF55T4 by: STMicroelectronics

Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET II Power MOSFET in D2PAK package

Part Details for STB85NF55T4 by STMicroelectronics

Overview of STB85NF55T4 by STMicroelectronics

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for STB85NF55T4

Part # Distributor Description Stock Price Buy
DISTI # 57P0653
Newark Lv Mosfet Planar & Old |Stmicroelectronics STB85NF55T4 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # STB85NF55T4
Avnet Americas Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB85NF55T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.1653
$1.1653 Buy Now
STMicroelectronics Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET II Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 0
  • 1 $2.7500
  • 10 $2.3100
  • 25 $2.3000
  • 100 $1.8700
  • 250 $1.8600
  • 500 $1.6700
$1.6700 / $2.7500 Buy Now
Bristol Electronics   2823
RFQ
ComSIT USA N-CHANNEL 55 V-0.0062 OHM-80 A D2PAK STRIPFET II POWER MOSFET Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Stock EU - 2000
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STB85NF55T4
Avnet Silica Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R (Alt: STB85NF55T4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now

Part Details for STB85NF55T4

STB85NF55T4 CAD Models

STB85NF55T4 Part Data Attributes

STB85NF55T4 STMicroelectronics
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STB85NF55T4 STMicroelectronics Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET II Power MOSFET in D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 980 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB85NF55T4

This table gives cross-reference parts and alternative options found for STB85NF55T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB85NF55T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB85NF55LT4 N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in D2PAK package STMicroelectronics STB85NF55T4 vs STB85NF55LT4
Part Number Description Manufacturer Compare
STP85NF55L N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in TO-220 package STMicroelectronics STB85NF55T4 vs STP85NF55L
SPI80N06S-08 Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG STB85NF55T4 vs SPI80N06S-08
IPP80N06S2L06AKSA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STB85NF55T4 vs IPP80N06S2L06AKSA1
SPB80N06S-08 Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STB85NF55T4 vs SPB80N06S-08
STB85NF55LT4 N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in D2PAK package STMicroelectronics STB85NF55T4 vs STB85NF55LT4
SP0000-84808 Power Field-Effect Transistor Infineon Technologies AG STB85NF55T4 vs SP0000-84808
IPB80N06S2L06XT Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STB85NF55T4 vs IPB80N06S2L06XT
IPB80N06S209ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STB85NF55T4 vs IPB80N06S209ATMA1
IPP80N06S2L06AKSA2 Power Field-Effect Transistor, 80A I(D), 55V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STB85NF55T4 vs IPP80N06S2L06AKSA2
SP0000-84809 Power Field-Effect Transistor Infineon Technologies AG STB85NF55T4 vs SP0000-84809

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