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P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD10P6F6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98Y2467
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Newark | Mosfet, P-Ch, -60V, -10A, To-252-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD10P6F6 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 71700 |
|
$0.3910 / $0.4260 | Buy Now |
DISTI #
86AK6458
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Newark | Mosfet, P-Ch, 60V, 10A, To-252 Rohs Compliant: Yes |Stmicroelectronics STD10P6F6 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.5240 / $0.5600 | Buy Now |
DISTI #
38AH9210
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Newark | P-Channel Stripfet -20 V To -500 V Rohs Compliant: Yes |Stmicroelectronics STD10P6F6 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4310 / $0.4590 | Buy Now |
DISTI #
STD10P6F6
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Avnet Americas | Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD10P6F6) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 2500 |
|
$0.3238 / $0.3443 | Buy Now |
DISTI #
98Y2467
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Avnet Americas | Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 98Y2467) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 3940 Partner Stock |
|
$0.7260 / $1.0700 | Buy Now |
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STMicroelectronics | P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package RoHS: Compliant Min Qty: 1 | 13592 |
|
$0.4700 / $1.2000 | Buy Now |
DISTI #
STD10P6F6
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TME | Transistor: P-MOSFET, unipolar, -60V, -7.2A, 35W, DPAK Min Qty: 1 | 1805 |
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$0.4700 / $0.8680 | Buy Now |
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ComSIT USA | AVAILABLE EU | 1389 |
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RFQ | |
DISTI #
STD10P6F6
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Avnet Silica | Trans MOSFET PCH 60V 10A 3Pin2Tab DPAK TR (Alt: STD10P6F6) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days | Silica - 45000 |
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Buy Now | |
DISTI #
STD10P6F6
|
Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 1597 |
|
$0.4600 / $1.1600 | Buy Now |
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STD10P6F6
STMicroelectronics
Buy Now
Datasheet
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STD10P6F6
STMicroelectronics
P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.116 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 35 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STD10P6F6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD10P6F6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SPD08P05 | Siemens | Check for Price | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | STD10P6F6 vs SPD08P05 |
SFW9Z14TM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | STD10P6F6 vs SFW9Z14TM |
SFW9Z34 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 | STD10P6F6 vs SFW9Z34 |
STD10PF06T4 | STMicroelectronics | Check for Price | P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET | STD10P6F6 vs STD10PF06T4 |
FQD7P06 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | STD10P6F6 vs FQD7P06 |
SFR9024 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-2 | STD10P6F6 vs SFR9024 |
SFW9Z24 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 | STD10P6F6 vs SFW9Z24 |
RFD8P06ESM | Intersil Corporation | Check for Price | 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | STD10P6F6 vs RFD8P06ESM |
RFD8P06ESM | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD10P6F6 vs RFD8P06ESM |
RFD8P06ESM9A | Intersil Corporation | Check for Price | 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | STD10P6F6 vs RFD8P06ESM9A |