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N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD13N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH6955
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Newark | Mosfet, N-Ch, 600V, 11A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD13N60M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3523 |
|
$0.7560 / $1.8500 | Buy Now |
DISTI #
STD13N60M2
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Avnet Americas | N-ch 600V 0.35 typ. 11A MDmesh M2 Power MOSFET T/R - Tape and Reel (Alt: STD13N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4271 / $0.4537 | Buy Now |
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STMicroelectronics | N-channel 600 V, 350 mOhm typ., 11 A MDmesh M2 Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 | 4623 |
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$0.5900 / $1.6900 | Buy Now |
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Bristol Electronics | 2723 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 70 |
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$1.3440 / $2.6880 | Buy Now |
DISTI #
STD13N60M2
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TME | Transistor: N-MOSFET, unipolar, 600V, 7A, 110W, DPAK, ESD Min Qty: 1 | 2059 |
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$0.9600 / $1.8100 | Buy Now |
DISTI #
STD13N60M2
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Avnet Silica | Nch 600V 035O typ 11A MDmesh M2 Power MOSFET TR (Alt: STD13N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | Silica - 5000 |
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Buy Now | |
DISTI #
C1S730200820916
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Chip One Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 1780 |
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$0.6090 / $1.5800 | Buy Now |
DISTI #
STD13N60M2
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EBV Elektronik | Nch 600V 035O typ 11A MDmesh M2 Power MOSFET TR (Alt: STD13N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | EBV - 20000 |
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Buy Now | |
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LCSC | 600V 11A 110W 380m10V5.5A 4V 1 N-channel DPAK MOSFETs ROHS | 1956 |
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$0.3547 / $0.6379 | Buy Now |
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STD13N60M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD13N60M2
STMicroelectronics
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STD13N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD13N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPI60R380C6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | STD13N60M2 vs IPI60R380C6 |
STB11NM65N-1 | STMicroelectronics | Check for Price | 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 | STD13N60M2 vs STB11NM65N-1 |
IPP60R380C6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD13N60M2 vs IPP60R380C6 |
SPW11N60C2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN | STD13N60M2 vs SPW11N60C2 |
SPI11N65C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | STD13N60M2 vs SPI11N65C3 |