Datasheets
STD13N60M2 by: STMicroelectronics

N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package

Part Details for STD13N60M2 by STMicroelectronics

Results Overview of STD13N60M2 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STD13N60M2 Information

STD13N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STD13N60M2

Part # Distributor Description Stock Price Buy
DISTI # 07AH6955
Newark Mosfet, N-Ch, 600V, 11A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD13N60M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3523
  • 1 $1.8500
  • 10 $1.3100
  • 25 $1.1900
  • 50 $1.0700
  • 100 $0.9560
  • 250 $0.8810
  • 500 $0.8050
  • 1,000 $0.7560
$0.7560 / $1.8500 Buy Now
DISTI # STD13N60M2
Avnet Americas N-ch 600V 0.35 typ. 11A MDmesh M2 Power MOSFET T/R - Tape and Reel (Alt: STD13N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4537
  • 5,000 $0.4427
  • 10,000 $0.4374
  • 15,000 $0.4321
  • 20,000 $0.4271
$0.4271 / $0.4537 Buy Now
STMicroelectronics N-channel 600 V, 350 mOhm typ., 11 A MDmesh M2 Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 4623
  • 1 $1.6900
  • 10 $1.1000
  • 100 $0.7400
  • 500 $0.5900
$0.5900 / $1.6900 Buy Now
Bristol Electronics   2723
RFQ
Bristol Electronics   Min Qty: 2 70
  • 2 $2.6880
  • 11 $1.7472
  • 30 $1.3440
$1.3440 / $2.6880 Buy Now
DISTI # STD13N60M2
TME Transistor: N-MOSFET, unipolar, 600V, 7A, 110W, DPAK, ESD Min Qty: 1 2059
  • 1 $1.8100
  • 10 $1.4900
  • 100 $1.2000
  • 250 $1.0800
  • 500 $1.0000
  • 1,000 $0.9600
$0.9600 / $1.8100 Buy Now
DISTI # STD13N60M2
Avnet Silica Nch 600V 035O typ 11A MDmesh M2 Power MOSFET TR (Alt: STD13N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Silica - 5000
Buy Now
DISTI # C1S730200820916
Chip One Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 1780
  • 1 $1.5800
  • 10 $1.0300
  • 50 $0.9560
  • 100 $0.6930
  • 200 $0.6540
  • 500 $0.6090
$0.6090 / $1.5800 Buy Now
DISTI # STD13N60M2
EBV Elektronik Nch 600V 035O typ 11A MDmesh M2 Power MOSFET TR (Alt: STD13N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days EBV - 20000
Buy Now
LCSC 600V 11A 110W 380m10V5.5A 4V 1 N-channel DPAK MOSFETs ROHS 1956
  • 1 $0.6379
  • 10 $0.5186
  • 30 $0.4590
  • 100 $0.4143
  • 1,000 $0.3607
  • 2,500 $0.3547
$0.3547 / $0.6379 Buy Now

Part Details for STD13N60M2

STD13N60M2 CAD Models

STD13N60M2 Part Data Attributes

STD13N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STD13N60M2 STMicroelectronics N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 44 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD13N60M2

This table gives cross-reference parts and alternative options found for STD13N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD13N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPI60R380C6 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN STD13N60M2 vs IPI60R380C6
STB11NM65N-1 STMicroelectronics Check for Price 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 STD13N60M2 vs STB11NM65N-1
IPP60R380C6 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STD13N60M2 vs IPP60R380C6
SPW11N60C2 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN STD13N60M2 vs SPW11N60C2
SPI11N65C3 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 STD13N60M2 vs SPI11N65C3

STD13N60M2 Related Parts

STD13N60M2 Frequently Asked Questions (FAQ)

  • The maximum operating junction temperature of the STD13N60M2 is 150°C.

  • Yes, the STD13N60M2 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and internal gate resistance.

  • To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The recommended thermal resistance (Rth) is ≤ 1.5 K/W.

  • The recommended gate drive voltage for the STD13N60M2 is between 10 V and 15 V to ensure proper switching and minimize power losses.

  • Yes, the STD13N60M2 can be used in a parallel configuration to increase current handling, but ensure that the devices are properly matched and the gate drive signals are synchronized to prevent uneven current sharing.

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