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Transistors Power Field-Effect Transistors STD1NK60-1

Transistors
STD1NK60-1
STMicroelectronics
Description: N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package

Overview of STD1NK60-1 by STMicroelectronics

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for STD1NK60-1 by STMicroelectronics

Part # Manufacturer Description Stock Price Buy
DISTI # 57P0704
Newark Hv Mosfet Planar |Stmicroelectronics STD1NK60-1 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-12782-5-ND
DigiKey MOSFET N-CH 600V 1A IPAK Min Qty: 1 Lead time: 13 Weeks Container: Tube 5718
In Stock
  • 1 $1.3000
  • 75 $0.5789
  • 150 $0.5183
  • 525 $0.4319
  • 1,050 $0.3979
$0.3979 / $1.3000 Buy Now
DISTI # STD1NK60-1
Avnet Americas Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD1NK60-1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.3533
$0.3533 Buy Now
DISTI # 511-STD1NK60-1
Mouser Electronics MOSFETs N-Ch 600 Volt 1.0 A RoHS: Compliant 1229
  • 1 $0.7500
  • 10 $0.5990
  • 100 $0.4750
  • 500 $0.4030
  • 1,000 $0.3980
  • 3,000 $0.3970
$0.3970 / $0.7500 Buy Now
STMicroelectronics N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package RoHS: Compliant Min Qty: 1 1229
  • 1 $0.7400
  • 10 $0.5900
  • 100 $0.4700
  • 500 $0.4000
$0.4000 / $0.7400 Buy Now
Future Electronics STD1NK60 Series 600 V 1 A SMT N-Channel SuperMESH™ Power Mosfet - I-PAK RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 75 Lead time: 13 Weeks Container: Tube 0
Tube
  • 75 $0.4500
  • 300 $0.4300
  • 1,125 $0.4100
  • 3,000 $0.4000
  • 7,500 $0.3800
$0.3800 / $0.4500 Buy Now
Future Electronics STD1NK60 Series 600 V 1 A SMT N-Channel SuperMESH™ Power Mosfet - I-PAK RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 75 Lead time: 13 Weeks Container: Tube 0
Tube
  • 75 $0.4500
  • 300 $0.4300
  • 1,125 $0.4100
  • 3,000 $0.4000
  • 7,500 $0.3800
$0.3800 / $0.4500 Buy Now
Future Electronics STD1NK60 Series 600 V 1 A SMT N-Channel SuperMESH™ Power Mosfet - I-PAK RoHS: Compliant pbFree: Yes Min Qty: 5100 Package Multiple: 75 Lead time: 13 Weeks Container: Tube 0
Tube
  • 75 $0.4150
  • 375 $0.3950
  • 1,875 $0.3750
  • 3,750 $0.3700
  • 11,250 $0.3450
$0.3450 / $0.4150 Buy Now
DISTI # STD1NK60-1
TME Transistor: N-MOSFET, unipolar, 600V, 0.63A, 30W, I2PAK Min Qty: 1 300
  • 1 $0.4120
  • 10 $0.3710
  • 75 $0.3430
  • 150 $0.3280
  • 525 $0.2940
  • 1,050 $0.2740
$0.2740 / $0.4120 Buy Now
DISTI # STD1NK60-1
Avnet Silica Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube (Alt: STD1NK60-1) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days Silica - 2775
Buy Now
DISTI # C1S730200520627
Chip1Stop Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant pbFree: Yes 1210
  • 5 $1.3900
  • 10 $0.5760
  • 25 $0.4770
  • 100 $0.3980
  • 500 $0.3340
  • 1,000 $0.2410
$0.2410 / $1.3900 Buy Now
DISTI # STD1NK60-1
EBV Elektronik Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube (Alt: STD1NK60-1) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 600V 1A 30W 8.5500mA10V 3.7V250uA 1 N-Channel IPAK MOSFETs ROHS 41
  • 1 $0.3471
  • 10 $0.3408
  • 30 $0.3346
  • 100 $0.3299
$0.3299 / $0.3471 Buy Now

CAD Models for STD1NK60-1 by STMicroelectronics
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Part Data Attributes for STD1NK60-1 by STMicroelectronics
Parametric Data

STD1NK60-1
STMicroelectronics
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
STMICROELECTRONICS
Part Package Code
TO-251AA
Package Description
IPAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
13 Weeks
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
25 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
1 A
Drain-source On Resistance-Max
8.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
30 W
Pulsed Drain Current-Max (IDM)
4 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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    STMicroelectronics
    N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package
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Alternate Parts for STD1NK60-1

This table gives cross-reference parts and alternative options found for STD1NK60-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD1NK60-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments STD1NK60-1 vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STD1NK60-1 vs IPB80N06S2LH5ATMA1
STH8NA60FI 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN STMicroelectronics STD1NK60-1 vs STH8NA60FI
IXFH14N80 Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc STD1NK60-1 vs IXFH14N80
IXFH7N90Q Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Littelfuse Inc STD1NK60-1 vs IXFH7N90Q
STW80NF55-06 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics STD1NK60-1 vs STW80NF55-06
STP19N06 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics STD1NK60-1 vs STP19N06
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics STD1NK60-1 vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation STD1NK60-1 vs NDB705BEL
STD12N05-1 12A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 STMicroelectronics STD1NK60-1 vs STD12N05-1

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