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N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33R1142
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Newark | Mosfet, N Channel, 600V, 1A, Dpak, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:500Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD1NK60T4 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 7946 |
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$0.4880 / $1.1700 | Buy Now |
DISTI #
86AK6455
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Newark | Mosfet, N-Ch, 600V, 0.5A, To-252 Rohs Compliant: Yes |Stmicroelectronics STD1NK60T4 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4270 / $0.4600 | Buy Now |
DISTI #
497-2483-1-ND
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DigiKey | MOSFET N-CH 600V 1A DPAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5735 In Stock |
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$0.3750 / $1.0000 | Buy Now |
DISTI #
STD1NK60T4
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Avnet Americas | Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD1NK60T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.4185 / $0.4365 | Buy Now |
DISTI #
511-STD1NK60
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Mouser Electronics | MOSFET N-Ch 600 Volt 1.0Amp Zener SuperMESH RoHS: Compliant | 3844 |
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$0.3750 / $1.0000 | Buy Now |
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STMicroelectronics | N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package RoHS: Compliant Min Qty: 1 | 3844 |
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$0.5300 / $0.9800 | Buy Now |
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Future Electronics | N-Channel 600 V 8.5 Ω 10 nC SMT SuperMESH™ MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 12500Reel |
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$0.3700 / $0.3950 | Buy Now |
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Future Electronics | N-Channel 600 V 8.5 Ω 10 nC SMT SuperMESH™ MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3700 / $0.4000 | Buy Now |
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Future Electronics | N-Channel 600 V 8.5 Ω 10 nC SMT SuperMESH™ MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 2500 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.3700 / $0.4950 | Buy Now |
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Future Electronics | N-Channel 600 V 8.5 Ω 10 nC SMT SuperMESH™ MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3700 / $0.3950 | Buy Now |
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STD1NK60T4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD1NK60T4
STMicroelectronics
N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-252AA | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 25 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 8.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 30 W | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STD1NK60T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD1NK60T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQD1N60 | Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD1NK60T4 vs FQD1N60 |
SSR2N60B | 1.8A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | STD1NK60T4 vs SSR2N60B |
SSR2N60BTF | Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD1NK60T4 vs SSR2N60BTF |
FQD1N60C | Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | STD1NK60T4 vs FQD1N60C |
FQD1N60TF | Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD1NK60T4 vs FQD1N60TF |
SSR1N60BTF | 0.9A, 600V, 12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | STD1NK60T4 vs SSR1N60BTF |
SSR1N60BTF | Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD1NK60T4 vs SSR1N60BTF |
FQD1N60TF | 1A, 600V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | STD1NK60T4 vs FQD1N60TF |
SSR1N60B | Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD1NK60T4 vs SSR1N60B |
SSR2N60B | Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD1NK60T4 vs SSR2N60B |