Part Details for STD3NM60T4 by STMicroelectronics
Overview of STD3NM60T4 by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Smart Cities
Motor control systems
Price & Stock for STD3NM60T4
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2080 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 2500 |
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$0.9652 / $2.9250 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 1664 |
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$0.8138 / $2.3250 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 90 |
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$1.1625 / $2.3250 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 2000 |
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$1.0725 / $3.9000 | Buy Now |
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ComSIT USA | N-CHANNEL 600V-1.3 OHM-3A DPAK ZENER-PROTECTED MDMESH POWER MOSFET Power Field-Effect Transistor, 3A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | Europe - 5000 |
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RFQ | |
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New Advantage Corporation | Power Field-Effect Transistor, 3A I(D),600V,1.5ohm,1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-252 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 4925 |
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$0.6200 / $1.0600 | Buy Now |
Part Details for STD3NM60T4
STD3NM60T4 CAD Models
STD3NM60T4 Part Data Attributes:
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STD3NM60T4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD3NM60T4
STMicroelectronics
3A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD3NM60T4
This table gives cross-reference parts and alternative options found for STD3NM60T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD3NM60T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP03N60S5XK | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD3NM60T4 vs SPP03N60S5XK |
| SPS03N60C3 | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN | Infineon Technologies AG | STD3NM60T4 vs SPS03N60C3 |
| STD3NM60-1 | 3A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | STMicroelectronics | STD3NM60T4 vs STD3NM60-1 |
| SPU03N60S5BKMA1 | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3 | Infineon Technologies AG | STD3NM60T4 vs SPU03N60S5BKMA1 |
| SPP03N60C3XKSA1 | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD3NM60T4 vs SPP03N60C3XKSA1 |
| SPB03N60S5ATMA1 | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STD3NM60T4 vs SPB03N60S5ATMA1 |
| SPS03N60C3XK | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN | Infineon Technologies AG | STD3NM60T4 vs SPS03N60C3XK |