Part Details for STD4NK50ZD by STMicroelectronics
Overview of STD4NK50ZD by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for STD4NK50ZD
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 8 |
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RFQ | ||
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Quest Components | 6 |
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$4.6200 / $6.3000 | Buy Now | |
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Chip1Cloud | MOSFET N-CH 500V 3A DPAK | 2500 |
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RFQ | |
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DISTI #
1291959
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Farnell | MOSFET, N, D-PAK RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each | 0 |
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$0.2878 | Buy Now |
Part Details for STD4NK50ZD
STD4NK50ZD CAD Models
STD4NK50ZD Part Data Attributes:
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STD4NK50ZD
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD4NK50ZD
STMicroelectronics
3A, 500V, 2.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 2.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |