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Part Details for STF80N10F7 by STMicroelectronics
Overview of STF80N10F7 by STMicroelectronics
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Price & Stock for STF80N10F7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7582
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Newark | Mosfet, N-Ch, 100V, 40A, To-220Fp, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:40A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Stmicroelectronics STF80N10F7 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.7960 | Buy Now |
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STMicroelectronics | N-channel 100 V, 0.0085 Ohm typ., 40 A STripFET F7 Power MOSFET in TO-220FP package RoHS: Compliant Min Qty: 1 | 341 |
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$1.1500 / $1.9200 | Buy Now |
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DISTI #
2807200
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element14 Asia-Pacific | MOSFET, N-CH, 100V, 40A, TO-220FP RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.9036 / $1.9763 | Buy Now |
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DISTI #
2807200
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Farnell | MOSFET, N-CH, 100V, 40A, TO-220FP RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 0 |
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$0.8731 / $1.7687 | Buy Now |
Part Details for STF80N10F7
STF80N10F7 CAD Models
STF80N10F7 Part Data Attributes
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STF80N10F7
STMicroelectronics
Buy Now
Datasheet
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STF80N10F7
STMicroelectronics
N-channel 100 V, 0.0085 Ohm typ., 40 A STripFET F7 Power MOSFET in TO-220FP package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220FP, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA LOW-ON RESISTANCE | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |