Datasheets
STFI34N65M5 by: STMicroelectronics

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in I2PAKFP package

Part Details for STFI34N65M5 by STMicroelectronics

Overview of STFI34N65M5 by STMicroelectronics

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Price & Stock for STFI34N65M5

Part # Distributor Description Stock Price Buy
DISTI # 497-13163-ND
DigiKey MOSFET N CH 650V 28A I2PAKFP Min Qty: 1 Lead time: 38 Weeks Container: Tube 1492
In Stock
  • 1 $5.5400
  • 50 $4.3904
  • 100 $3.7633
  • 500 $3.3451
  • 1,000 $2.8643
$2.8643 / $5.5400 Buy Now
DISTI # 30609160
Verical Trans MOSFET N-CH 650V 28A 3-Pin(3+Tab) I2PAKFP Tube Min Qty: 12 Package Multiple: 1 Americas - 16
  • 12 $2.8125
$2.8125 Buy Now
DISTI # C1S730200735955
Chip1Stop Trans MOSFET N-CH 650V 28A 3-Pin(3+Tab) I2PAKFP Tube RoHS: Compliant pbFree: Yes Container: Tube 16
  • 1 $2.2900
  • 10 $2.2200
$2.2200 / $2.2900 Buy Now
Perfect Parts Corporation   1676
RFQ

Part Details for STFI34N65M5

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STFI34N65M5 Part Data Attributes

STFI34N65M5 STMicroelectronics
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STFI34N65M5 STMicroelectronics N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in I2PAKFP package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 510 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.3 pF
JEDEC-95 Code TO-281
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W
Pulsed Drain Current-Max (IDM) 112 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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