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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82AH9139
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Newark | Igbt, 650V, 86A, 272W, To-263 Rohs Compliant: Yes |Stmicroelectronics STGB50H65FB2 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 945 |
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$1.7900 / $3.6400 | Buy Now |
DISTI #
497-STGB50H65FB2-ND
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DigiKey | DISCRETE Min Qty: 1000 Lead time: 18 Weeks Container: Bulk | Temporarily Out of Stock |
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$1.0181 | Buy Now |
DISTI #
STGB50H65FB2
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Avnet Americas | Transistor IGBT Chip N-Channel 650V 50A 3-Pin D2PAK T/R - Tape and Reel (Alt: STGB50H65FB2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.9396 / $1.0692 | Buy Now |
DISTI #
511-STGB50H65FB2
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Mouser Electronics | IGBT Transistors Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT RoHS: Compliant | 0 |
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$1.3100 / $2.1400 | Order Now |
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STMicroelectronics | Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package RoHS: Compliant Min Qty: 1 | 0 |
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$1.5200 / $2.1000 | Buy Now |
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Future Electronics | Trench gate field-stop 650 V, 50 A high-speed HB2 IGBT, D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
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$0.7850 / $0.8200 | Buy Now |
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Future Electronics | Trench gate field-stop 650 V, 50 A high-speed HB2 IGBT, D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$1.2100 / $1.4500 | Buy Now |
DISTI #
STGB50H65FB2
|
Avnet Americas | Transistor IGBT Chip N-Channel 650V 50A 3-Pin D2PAK T/R - Tape and Reel (Alt: STGB50H65FB2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.9396 / $1.0692 | Buy Now |
DISTI #
STGB50H65FB2
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TME | Transistor: IGBT, 650V, 53A, 272W, D2PAK Min Qty: 1 | 0 |
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$1.3400 / $2.2500 | RFQ |
|
Ameya Holding Limited | 945 |
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RFQ |
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STGB50H65FB2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGB50H65FB2
STMicroelectronics
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Date Of Intro | 2020-03-19 | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 86 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 272 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 225 ns | |
Turn-on Time-Nom (ton) | 41 ns | |
VCEsat-Max | 2 V |