Part Details for STGE50NC60VD by STMicroelectronics
Overview of STGE50NC60VD by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STGE50NC60VD
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
94M9669
|
Newark | Igbt Single Transistor, 90 A, 2.5 V, 260 W, 600 V, Isotop, 4 Rohs Compliant: Yes |Stmicroelectronics STGE50NC60VD Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now |
Part Details for STGE50NC60VD
STGE50NC60VD CAD Models
STGE50NC60VD Part Data Attributes
|
STGE50NC60VD
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STGE50NC60VD
STMicroelectronics
50 A, 600 V very fast IGBT
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | ISOTOP | |
Package Description | ISOTOP-4 | |
Pin Count | 4 | |
Manufacturer Package Code | ISOTOP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 90 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 260 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 247 ns | |
Turn-on Time-Nom (ton) | 61 ns | |
VCEsat-Max | 2.5 V |
Alternate Parts for STGE50NC60VD
This table gives cross-reference parts and alternative options found for STGE50NC60VD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGE50NC60VD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT40GP60JDQ2 | Insulated Gate Bipolar Transistor, 86A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 | Microsemi Corporation | STGE50NC60VD vs APT40GP60JDQ2 |