Datasheets
STGP20M65DF2 by:

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Part Details for STGP20M65DF2 by STMicroelectronics

Overview of STGP20M65DF2 by STMicroelectronics

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Price & Stock for STGP20M65DF2

Part # Distributor Description Stock Price Buy
DISTI # 69AH2733
Newark Igbt, 650V, 40A, 175Deg C, 166W Rohs Compliant: Yes |Stmicroelectronics STGP20M65DF2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
Buy Now
DISTI # 497-17909-ND
DigiKey IGBT TRENCH FS 650V 40A TO220 Min Qty: 1 Lead time: 18 Weeks Container: Tube Temporarily Out of Stock
  • 1 $2.2700
  • 50 $1.8248
  • 100 $1.5013
  • 500 $1.2704
  • 1,000 $1.0779
  • 2,000 $1.0240
  • 5,000 $0.9855
  • 10,000 $0.9529
$0.9529 / $2.2700 Buy Now
DISTI # STGP20M65DF2
Avnet Americas STMSTGP20M65DF2 - Bulk (Alt: STGP20M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 1,000 $1.1320
  • 2,000 $1.1092
  • 4,000 $1.0863
  • 6,000 $1.0634
  • 8,000 $1.0405
  • 10,000 $1.0177
  • 100,000 $0.9948
$0.9948 / $1.1320 Buy Now
DISTI # 511-STGP20M65DF2
Mouser Electronics IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss RoHS: Compliant 0
  • 1 $2.2700
  • 10 $1.8300
  • 100 $1.5000
  • 250 $1.4400
  • 500 $1.2600
  • 1,000 $1.0700
$1.0700 / $2.2700 Order Now
STMicroelectronics Trench gate field-stop IGBT M series, 650 V 20 A low loss RoHS: Compliant Min Qty: 1 0
  • 1 $2.2300
  • 10 $1.7900
  • 100 $1.4700
  • 250 $1.4100
  • 500 $1.2400
$1.2400 / $2.2300 Buy Now
Future Electronics IGBT TRENCH 650V 40A TO220 RoHS: Non Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 0
  • 1,000 $1.0200
$1.0200 Buy Now
DISTI # STGP20M65DF2
Avnet Americas STMSTGP20M65DF2 - Bulk (Alt: STGP20M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 1,000 $1.1320
  • 2,000 $1.1092
  • 4,000 $1.0863
  • 6,000 $1.0634
  • 8,000 $1.0405
  • 10,000 $1.0177
  • 100,000 $0.9948
$0.9948 / $1.1320 Buy Now
DISTI # STGP20M65DF2
TME Transistor: IGBT, 650V, 20A, 166W, TO220AB Min Qty: 1 0
  • 1 $2.0300
  • 3 $1.8300
  • 10 $1.7000
  • 50 $1.6100
  • 150 $1.4500
  • 500 $1.3500
  • 1,000 $1.3100
  • 2,000 $1.2600
  • 6,000 $1.2100
$1.2100 / $2.0300 RFQ
DISTI # STGP20M65DF2
Avnet Silica STMSTGP20M65DF2 (Alt: STGP20M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
Chip1Cloud IGBT TRENCH 650V 40A TO220 1400
RFQ
DISTI # STGP20M65DF2
EBV Elektronik STMSTGP20M65DF2 (Alt: STGP20M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 5 Days EBV - 0
Buy Now
DISTI # 3366983
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $2.9658
  • 10 $2.6625
  • 100 $2.1448
  • 500 $1.7602
  • 1,000 $1.4570
  • 2,000 $1.4274
$1.4274 / $2.9658 Buy Now
DISTI # 3366983
Farnell IGBT, 650V, 40A, 175DEG C, 166W RoHS: Compliant Min Qty: 1000 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1,000 $1.0723
$1.0723 Buy Now

Part Details for STGP20M65DF2

STGP20M65DF2 CAD Models

STGP20M65DF2 Part Data Attributes:

STGP20M65DF2 STMicroelectronics
Buy Now Datasheet
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STGP20M65DF2 STMicroelectronics Trench gate field-stop IGBT M series, 650 V 20 A low loss
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 252 ns
Turn-on Time-Nom (ton) 39.6 ns
VCEsat-Max 2 V

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