Datasheets
STGWT60V60DF by:

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Part Details for STGWT60V60DF by STMicroelectronics

Overview of STGWT60V60DF by STMicroelectronics

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for STGWT60V60DF

Part # Distributor Description Stock Price Buy
DISTI # 06X3612
Newark Igbt |Stmicroelectronics STGWT60V60DF Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
STMicroelectronics Trench gate field-stop IGBT, V series 600 V, 60 A very high speed RoHS: Compliant Min Qty: 1 0
  • 1 $5.2300
  • 10 $4.7100
  • 25 $4.4500
  • 100 $3.8600
  • 300 $3.8600
$3.8600 / $5.2300 Buy Now
DISTI # STGWT60V60DF
TME Transistor: IGBT, 600V, 60A, 375W, TO3P Min Qty: 1 0
  • 1 $5.3300
  • 3 $4.7900
  • 10 $4.4400
  • 30 $4.2300
  • 120 $3.8000
  • 600 $3.6800
  • 1,200 $3.5500
  • 3,000 $3.3000
  • 9,000 $3.1800
$3.1800 / $5.3300 RFQ
Chip1Cloud IGBT 600V 80A 375W TO3P / Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube 2850
RFQ

Part Details for STGWT60V60DF

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STGWT60V60DF Part Data Attributes:

STGWT60V60DF STMicroelectronics
Buy Now Datasheet
Compare Parts:
STGWT60V60DF STMicroelectronics Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 243 ns
Turn-on Time-Nom (ton) 80 ns
VCEsat-Max 2.3 V

Alternate Parts for STGWT60V60DF

This table gives cross-reference parts and alternative options found for STGWT60V60DF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGWT60V60DF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STGWA60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT STMicroelectronics STGWT60V60DF vs STGWA60V60DF

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