Datasheets
STH270N8F7-2 by: STMicroelectronics

N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Part Details for STH270N8F7-2 by STMicroelectronics

Overview of STH270N8F7-2 by STMicroelectronics

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Price & Stock for STH270N8F7-2

Part # Distributor Description Stock Price Buy
DISTI # 26AH0177
Newark Mosfet, N-Ch, 80V, 180A, 175Deg C, 315W, Transistor Polarity:N Channel, Continuous Drain Current Id:180A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0017Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Stmicroelectronics STH270N8F7-2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $5.6000
  • 10 $4.0600
  • 25 $3.7600
  • 50 $3.4500
  • 100 $3.1500
  • 250 $2.9900
  • 500 $2.8300
$2.8300 / $5.6000 Buy Now
DISTI # STH270N8F7-2
Avnet Americas Trans MOSFET N-CH 80V 180A 2-Pin H2PAK T/R - Tape and Reel (Alt: STH270N8F7-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.3540
  • 2,000 $2.2966
  • 4,000 $2.2689
  • 6,000 $2.2419
  • 8,000 $2.2155
$2.2155 / $2.3540 Buy Now
STMicroelectronics N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package RoHS: Compliant Min Qty: 1 0
  • 1 $5.6500
  • 10 $3.8300
  • 25 $3.8300
  • 100 $2.7800
  • 250 $2.7800
  • 500 $2.5900
$2.5900 / $5.6500 Buy Now
DISTI # STH270N8F7-2
Avnet Silica Trans MOSFET N-CH 80V 180A 2-Pin H2PAK T/R (Alt: STH270N8F7-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
Win Source Electronics MOSFET N-CH 80V 180A H2PAK 40000
  • 13 $3.9073
  • 32 $3.2060
  • 49 $3.1059
  • 67 $3.0057
  • 87 $2.9055
  • 116 $2.6049
$2.6049 / $3.9073 Buy Now

Part Details for STH270N8F7-2

STH270N8F7-2 CAD Models

STH270N8F7-2 Part Data Attributes

STH270N8F7-2 STMicroelectronics
Buy Now Datasheet
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STH270N8F7-2 STMicroelectronics N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 1160 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 315 W
Pulsed Drain Current-Max (IDM) 720 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STH270N8F7-2

This table gives cross-reference parts and alternative options found for STH270N8F7-2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STH270N8F7-2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB024N08N5ATMA1 Infineon Technologies AG $2.6170 Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 STH270N8F7-2 vs IPB024N08N5ATMA1

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