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Part Details for STHU32N65DM6AG by STMicroelectronics
Overview of STHU32N65DM6AG by STMicroelectronics
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STHU32N65DM6AG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AK8153
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Newark | Mosfet Rohs Compliant: Yes |Stmicroelectronics STHU32N65DM6AG Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 58 |
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$6.6000 / $9.2400 | Buy Now |
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DISTI #
497-STHU32N65DM6AGCT-ND
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DigiKey | AUTOMOTIVE-GRADE N-CHANNEL 650 V Min Qty: 1 Lead time: 99 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9 In Stock |
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$4.7995 / $8.4600 | Buy Now |
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DISTI #
STHU32N65DM6AG
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Avnet Americas | Transistor MOSFET N-Channel 650V 37A 7-Pin HU3PAK T/R - Tape and Reel (Alt: STHU32N65DM6AG) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Container: Reel | 0 |
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$4.5936 / $5.2272 | Buy Now |
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DISTI #
511-STHU32N65DM6AG
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Mouser Electronics | MOSFET Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET RoHS: Compliant | 600 |
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$4.7900 / $8.4600 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package RoHS: Compliant Min Qty: 1 | 600 |
|
$5.5700 / $8.2900 | Buy Now |
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Future Electronics | RoHS: Non Compliant pbFree: No Min Qty: 600 Package Multiple: 600 | 0 |
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$4.7000 | Buy Now |
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DISTI #
STHU32N65DM6AG
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Avnet Americas | Transistor MOSFET N-Channel 650V 37A 7-Pin HU3PAK T/R - Tape and Reel (Alt: STHU32N65DM6AG) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Container: Reel | 0 |
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$4.5936 / $5.2272 | Buy Now |
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DISTI #
STHU32N65DM6AG
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EBV Elektronik | Transistor MOSFET N-Channel 650V 37A 7-Pin HU3PAK T/R (Alt: STHU32N65DM6AG) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 7 Weeks, 4 Days | EBV - 0 |
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Buy Now | |
|
DISTI #
3929069RL
|
element14 Asia-Pacific | MOSFET RoHS: Compliant Min Qty: 10 Container: Reel | 58 |
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$5.9960 / $6.9411 | Buy Now |
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DISTI #
3929069
|
element14 Asia-Pacific | MOSFET RoHS: Compliant Min Qty: 1 Container: Cut Tape | 58 |
|
$5.9960 / $8.9349 | Buy Now |
Part Details for STHU32N65DM6AG
STHU32N65DM6AG CAD Models
STHU32N65DM6AG Part Data Attributes:
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STHU32N65DM6AG
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STHU32N65DM6AG
STMicroelectronics
Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 778 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.097 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.3 pF | |
| JESD-30 Code | R-PSSO-G7 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 320 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |