Part Details for STI18N60M2 by STMicroelectronics
Overview of STI18N60M2 by STMicroelectronics
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STI18N60M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
41Y5793
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Newark | 16/32-Bits Micros |Stmicroelectronics STI18N60M2 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.0000 / $1.2300 | Buy Now |
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ComSIT USA | N-CHANNEL 600 V, 0.255 OHM TYP., 13 A MDMESH M2 POWER MOSFET Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1000 |
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RFQ |
Part Details for STI18N60M2
STI18N60M2 CAD Models
STI18N60M2 Part Data Attributes
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STI18N60M2
STMicroelectronics
Buy Now
Datasheet
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STI18N60M2
STMicroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in I2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2018-11-08 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 135 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STI18N60M2
This table gives cross-reference parts and alternative options found for STI18N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI18N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TK14E65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | STI18N60M2 vs TK14E65W5 |
| TK14C65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | STI18N60M2 vs TK14C65W5 |
| STP18N60M2 | N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220 package | STMicroelectronics | STI18N60M2 vs STP18N60M2 |
| IXKH13N60C5 | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IXYS Corporation | STI18N60M2 vs IXKH13N60C5 |
| SIHD14N60E-GE3 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Vishay Intertechnologies | STI18N60M2 vs SIHD14N60E-GE3 |
| IXKH13N60C5 | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Littelfuse Inc | STI18N60M2 vs IXKH13N60C5 |
| IXKP13N60C5 | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Littelfuse Inc | STI18N60M2 vs IXKP13N60C5 |
| IPB60R280C6 | Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | STI18N60M2 vs IPB60R280C6 |
| TK14G65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | STI18N60M2 vs TK14G65W5 |
| R6015ENJTL | Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN | ROHM Semiconductor | STI18N60M2 vs R6015ENJTL |