Datasheets
STI28N60M2 by: STMicroelectronics

N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

Part Details for STI28N60M2 by STMicroelectronics

Overview of STI28N60M2 by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for STI28N60M2

Part # Distributor Description Stock Price Buy
DISTI # 09AK8024
Newark Mosfet N-Ch 650V 22A To-262 |Stmicroelectronics STI28N60M2 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $3.8100
  • 10 $3.4300
  • 25 $3.2200
  • 50 $3.0100
  • 100 $2.8100
$2.8100 / $3.8100 Buy Now
DISTI # 48AC3302
Newark Hv Mosfet Mdmesh |Stmicroelectronics STI28N60M2 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-17621-ND
DigiKey MOSFET N-CH 600V 22A I2PAK Min Qty: 1 Lead time: 16 Weeks Container: Tube 6000
In Stock
  • 1 $2.9100
  • 30 $2.3020
  • 120 $1.9732
  • 510 $1.7540
  • 1,020 $1.5019
  • 2,010 $1.4142
  • 5,010 $1.3567
$1.3567 / $2.9100 Buy Now
DISTI # STI28N60M2
Avnet Americas N-channel MDmesh M2 Power MOSFET 600V 0.135Ohm 22A 3-Pin I2PAK Tube - Tape and Reel (Alt: STI28N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.6118
  • 2,000 $1.5793
  • 4,000 $1.5467
  • 6,000 $1.5141
  • 8,000 $1.4816
  • 10,000 $1.4490
  • 100,000 $1.4164
$1.4164 / $1.6118 Buy Now
DISTI # 511-STI28N60M2
Mouser Electronics MOSFET N-channel 600 V, 0.135 Ohm typ 22 A MDmesh M2 Power MOSFETs in D2PAK package RoHS: Compliant 968
  • 1 $2.9100
  • 10 $2.1800
  • 25 $1.9200
  • 100 $1.7700
  • 250 $1.7400
  • 500 $1.6300
  • 1,000 $1.4900
  • 2,000 $1.4100
  • 5,000 $1.3500
$1.3500 / $2.9100 Buy Now
STMicroelectronics N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package RoHS: Compliant Min Qty: 1 968
  • 1 $2.8500
  • 10 $2.1900
  • 25 $2.0000
  • 100 $1.8600
  • 250 $1.8100
  • 500 $1.7200
$1.7200 / $2.8500 Buy Now
Future Electronics N-CHANNEL 600 V, 0.135 OHM TYP RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 0
Tube
  • 10 $1.6700
  • 50 $1.6100
  • 250 $1.5600
  • 500 $1.5300
  • 1,500 $1.4700
$1.4700 / $1.6700 Buy Now
DISTI # STI28N60M2
Avnet Americas N-channel MDmesh M2 Power MOSFET 600V 0.135Ohm 22A 3-Pin I2PAK Tube - Tape and Reel (Alt: STI28N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.6118
  • 2,000 $1.5793
  • 4,000 $1.5467
  • 6,000 $1.5141
  • 8,000 $1.4816
  • 10,000 $1.4490
  • 100,000 $1.4164
$1.4164 / $1.6118 Buy Now
DISTI # STI28N60M2
Avnet Americas N-channel MDmesh M2 Power MOSFET 600V 0.135Ohm 22A 3-Pin I2PAK Tube - Tape and Reel (Alt: STI28N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.6118
  • 2,000 $1.5793
  • 4,000 $1.5467
  • 6,000 $1.5141
  • 8,000 $1.4816
  • 10,000 $1.4490
  • 100,000 $1.4164
$1.4164 / $1.6118 Buy Now
DISTI # STI28N60M2
Avnet Silica N-channel MDmesh M2 Power MOSFET 600V 0.135Ohm 22A 3-Pin I2PAK Tube (Alt: STI28N60M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
DISTI # STI28N60M2
EBV Elektronik N-channel MDmesh M2 Power MOSFET 600V 0.135Ohm 22A 3-Pin I2PAK Tube (Alt: STI28N60M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2767838
Farnell MOSFET, N-CH, 650V, 22A, TO-262 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $1.2401
$1.2401 Buy Now

Part Details for STI28N60M2

STI28N60M2 CAD Models

STI28N60M2 Part Data Attributes

STI28N60M2 STMicroelectronics
Buy Now Datasheet
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STI28N60M2 STMicroelectronics N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description I2PAK-3
Reach Compliance Code not_compliant
Factory Lead Time 16 Weeks
Date Of Intro 2017-03-16
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 350 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 88 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STI28N60M2

This table gives cross-reference parts and alternative options found for STI28N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI28N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPI60R165CPAKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG STI28N60M2 vs IPI60R165CPAKSA1
IPI60R165CPXKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG STI28N60M2 vs IPI60R165CPXKSA1
Part Number Description Manufacturer Compare
SCT3120ALC11 Power Field-Effect Transistor, 21A I(D), 650V, 0.156ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor STI28N60M2 vs SCT3120ALC11
STF28N60M2 N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP package STMicroelectronics STI28N60M2 vs STF28N60M2
IPI60R165CPAKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG STI28N60M2 vs IPI60R165CPAKSA1
STFI28N60M2 N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in I2PAKFP package STMicroelectronics STI28N60M2 vs STFI28N60M2
IPI60R165CPXKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG STI28N60M2 vs IPI60R165CPXKSA1
IPW60R165CP Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG STI28N60M2 vs IPW60R165CP
LSE20N65F Power Field-Effect Transistor, 20A I(D), 650V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Xi’an Lonten Renewable Energy Technology Inc STI28N60M2 vs LSE20N65F
LSE20N60 Power Field-Effect Transistor, 20A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Xi’an Lonten Renewable Energy Technology Inc STI28N60M2 vs LSE20N60
STI26NM60N 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics STI28N60M2 vs STI26NM60N
LSC20N60 Power Field-Effect Transistor, 20A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Xi’an Lonten Renewable Energy Technology Inc STI28N60M2 vs LSC20N60

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