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N-channel 40 V, 1.7 mOhm typ., 160 A STripFET F6 Power MOSFET in an I2PAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
89W1478
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Newark | Lv Mosfet Trench |Stmicroelectronics STI300N4F6 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
STI300N4F6
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Avnet Americas | Trans MOSFET N-CH 40V 160A 3-Pin TO-262 Tube - Rail/Tube (Alt: STI300N4F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ | |
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STMicroelectronics | N-channel 40 V, 1.7 mOhm typ., 160 A STripFET F6 Power MOSFET in an I2PAK package RoHS: Compliant Min Qty: 1 | 30 |
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$2.5200 / $4.1600 | Buy Now |
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Bristol Electronics | 894 |
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RFQ | ||
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Quest Components | 715 |
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$2.9682 / $5.9364 | Buy Now | |
DISTI #
STI300N4F6
|
Avnet Americas | Trans MOSFET N-CH 40V 160A 3-Pin TO-262 Tube - Rail/Tube (Alt: STI300N4F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
|
RFQ |
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STI300N4F6
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STI300N4F6
STMicroelectronics
N-channel 40 V, 1.7 mOhm typ., 160 A STripFET F6 Power MOSFET in an I2PAK package
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-262AA | |
Package Description | ROHS COMPLIANT, TO-262, I2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 160 A | |
Drain-source On Resistance-Max | 0.002 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 640 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STI300N4F6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI300N4F6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TK1R5R04PB | Power Field-Effect Transistor | Toshiba America Electronic Components | STI300N4F6 vs TK1R5R04PB |
IPB160N04S402DXTMA1 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | STI300N4F6 vs IPB160N04S402DXTMA1 |
IPB160N04S3-H2 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7 | Infineon Technologies AG | STI300N4F6 vs IPB160N04S3-H2 |
IPB160N04S3H2ATMA1 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | STI300N4F6 vs IPB160N04S3H2ATMA1 |
NP160N04TUJ-E2-AY | Power MOSFETs for Automotive, MP-25ZT, /Embossed Tape | Renesas Electronics Corporation | STI300N4F6 vs NP160N04TUJ-E2-AY |