-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
497-10779-1-ND
|
DigiKey | MOSFET N-CH 200V 1A SOT-223 Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6969 In Stock |
|
$0.2362 / $0.7200 | Buy Now |
DISTI #
STN4NF20L
|
Avnet Americas | Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: STN4NF20L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 26 Weeks, 0 Days Container: Reel | 28000 |
|
$0.2637 / $0.2750 | Buy Now |
DISTI #
98Y2484
|
Avnet Americas | Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 98Y2484) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 497 Partner Stock |
|
$0.5090 / $0.8250 | Buy Now |
DISTI #
511-STN4NF20L
|
Mouser Electronics | MOSFET N-Ch 200V 1.1 Ohm 1A LGC STripFET II RoHS: Compliant | 42563 |
|
$0.2300 / $0.7200 | Buy Now |
|
STMicroelectronics | N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package RoHS: Compliant Min Qty: 1 | 42563 |
|
$0.3500 / $0.7100 | Buy Now |
|
Future Electronics | STN4NF20L: 200 V 1 A N-Ch. Low Gate Charge STripFET™ II Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
|
$0.2300 / $0.2450 | Buy Now |
|
Future Electronics | STN4NF20L: 200 V 1 A N-Ch. Low Gate Charge STripFET™ II Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
|
$0.2300 / $0.2450 | Buy Now |
|
Future Electronics | STN4NF20L: 200 V 1 A N-Ch. Low Gate Charge STripFET™ II Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
|
$0.2300 / $0.2450 | Buy Now |
DISTI #
STN4NF20L
|
Avnet Americas | Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: STN4NF20L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 26 Weeks, 0 Days Container: Reel | 28000 |
|
$0.2637 / $0.2750 | Buy Now |
DISTI #
98Y2484
|
Avnet Americas | Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 98Y2484) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 497 Partner Stock |
|
$0.5090 / $0.8250 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STN4NF20L
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STN4NF20L
STMicroelectronics
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT PACKAGE-4 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 1.55 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |