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Transistors / Power Field-Effect Transistors / STO47N60M6
Datasheets
STO47N60M6 by: STMicroelectronics

N-channel 600 V, 70 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-LL package

Part Details for STO47N60M6 by STMicroelectronics

Results Overview of STO47N60M6 by STMicroelectronics

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Applications Industrial Automation Electronic Manufacturing

STO47N60M6 Information

STO47N60M6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STO47N60M6

Part # Distributor Description Stock Price Buy
DISTI # STO47N60M6
Avnet Americas Transistor MOSFET N-Channel 600V 36A 8-Pin TO-LL HV T/R - Tape and Reel (Alt: STO47N60M6) RoHS: Not Compliant Min Qty: 1800 Package Multiple: 1800 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 1,800 $3.5217
  • 3,600 $3.4675
  • 7,200 $3.4133
  • 10,800 $3.3592
  • 14,400 $3.3185
$3.3185 / $3.5217 Buy Now
STMicroelectronics N-channel 600 V, 70 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-LL package RoHS: Compliant Min Qty: 1 0
  • 1 $7.1600
  • 10 $4.9800
  • 25 $4.9800
  • 100 $3.7100
  • 250 $3.7100
  • 500 $3.3200
$3.3200 / $7.1600 Buy Now
DISTI # STO47N60M6
Avnet Silica Transistor MOSFET N-Channel 600V 36A 8-Pin TO-LL HV T/R (Alt: STO47N60M6) RoHS: Compliant Min Qty: 1800 Package Multiple: 1800 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STO47N60M6
EBV Elektronik Transistor MOSFET N-Channel 600V 36A 8-Pin TO-LL HV T/R (Alt: STO47N60M6) RoHS: Compliant Min Qty: 1800 Package Multiple: 1800 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STO47N60M6

STO47N60M6 CAD Models

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STO47N60M6 Part Data Attributes

Parametric Data
STO47N60M6 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STO47N60M6 STMicroelectronics N-channel 600 V, 70 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-LL package
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STO47N60M6 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the STO47N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and to ensure that the device is properly cooled to prevent overheating.

  • To ensure proper cooling, the STO47N60M6 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to provide good airflow and to keep the device temperature below the maximum rated junction temperature (Tj) of 150°C. Additionally, the device should be operated within the specified maximum power dissipation (PD) rating.

  • The recommended gate drive voltage for the STO47N60M6 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance. It's recommended to consult the application note AN457: 'Power MOSFETs gate drive' for more information.

  • Yes, the STO47N60M6 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching performance may degrade at higher frequencies due to the internal gate resistance and capacitance. It's recommended to consult the application note AN453: 'Power MOSFETs in high-frequency applications' for more information.

  • To protect the STO47N60M6 from electrostatic discharge (ESD), it's recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static package and should not be exposed to high-voltage sources.

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