Part Details for STP10NB20 by STMicroelectronics
Overview of STP10NB20 by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for STP10NB20
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 100 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 200V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 472 |
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$1.2500 / $2.5000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 200V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 80 |
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$2.0000 / $4.0000 | Buy Now |
Part Details for STP10NB20
STP10NB20 CAD Models
STP10NB20 Part Data Attributes
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STP10NB20
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP10NB20
STMicroelectronics
10A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 85 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP10NB20
This table gives cross-reference parts and alternative options found for STP10NB20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP10NB20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK2519-01 | Power Field-Effect Transistor, 10A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | STP10NB20 vs 2SK2519-01 |
| YTA630 | TRANSISTOR 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | Toshiba America Electronic Components | STP10NB20 vs YTA630 |