Datasheets
STP16N65M2 by: STMicroelectronics

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

Part Details for STP16N65M2 by STMicroelectronics

Overview of STP16N65M2 by STMicroelectronics

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Price & Stock for STP16N65M2

Part # Distributor Description Stock Price Buy
DISTI # 41Y5973
Newark Hv Mosfet Mdmesh |Stmicroelectronics STP16N65M2 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-15275-5-ND
DigiKey MOSFET N-CH 650V 11A TO220 Min Qty: 1000 Lead time: 16 Weeks Container: Tube Temporarily Out of Stock
  • 1,000 $0.9870
$0.9870 Buy Now
DISTI # STP16N65M2
Avnet Americas Trans MOSFET N-CH 710V 11A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP16N65M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.9564
$0.9564 Buy Now
DISTI # 511-STP16N65M2
Mouser Electronics MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package RoHS: Compliant 976
  • 1 $2.0700
  • 10 $1.1100
  • 100 $1.0600
  • 250 $1.0500
  • 500 $1.0100
  • 1,000 $0.9860
  • 2,000 $0.9370
  • 5,000 $0.9020
$0.9020 / $2.0700 Buy Now
STMicroelectronics N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 976
  • 1 $2.0300
  • 10 $1.0900
  • 100 $1.0400
  • 250 $1.0300
  • 500 $0.9900
$0.9900 / $2.0300 Buy Now
Future Electronics 650 V 0.32 Ohm typ., 11 A N-Channel MDmesh M2 Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 16 Weeks Container: Tube 0
Tube
  • 50 $1.0800
  • 200 $1.0300
  • 750 $0.9800
  • 1,500 $0.9550
  • 3,750 $0.9050
$0.9050 / $1.0800 Buy Now
Future Electronics 650 V 0.32 Ohm typ., 11 A N-Channel MDmesh M2 Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 20 Weeks Container: Tube 0
Tube
  • 50 $1.0800
  • 200 $1.0300
  • 750 $0.9800
  • 1,500 $0.9550
  • 3,750 $0.9050
$0.9050 / $1.0800 Buy Now
DISTI # STP16N65M2
TME Transistor: N-MOSFET, MDmesh™ M2, unipolar, 650V, 6.9A, Idm: 44A Min Qty: 1 0
  • 1 $2.4200
  • 5 $2.1800
  • 25 $1.9300
  • 100 $1.7300
  • 500 $1.6200
$1.6200 / $2.4200 RFQ
ComSIT USA N-CHANNEL 650 V, 0.32 OHM TYP., 11 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE Power Field-Effect Transistor RoHS: Compliant Stock EU - 795
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STP16N65M2
Avnet Silica Trans MOSFET N-CH 710V 11A 3-Pin TO-220 Tube (Alt: STP16N65M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STP16N65M2
EBV Elektronik Trans MOSFET N-CH 710V 11A 3-Pin TO-220 Tube (Alt: STP16N65M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STP16N65M2

STP16N65M2 CAD Models

STP16N65M2 Part Data Attributes

STP16N65M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP16N65M2 STMicroelectronics N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-220, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 360 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.1 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 44 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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