There are no models available for this part yet.
Overview of STP16NB25 by STMicroelectronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for STP16NB25 by STMicroelectronics
Part Data Attributes for STP16NB25 by STMicroelectronics
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
Part Package Code
|
TO-220AB
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
250 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
250 V
|
Drain Current-Max (ID)
|
16 A
|
Drain-source On Resistance-Max
|
0.28 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
125 W
|
Pulsed Drain Current-Max (IDM)
|
64 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for STP16NB25
This table gives cross-reference parts and alternative options found for STP16NB25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP16NB25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF644PBF | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | STP16NB25 vs IRF644PBF |
MTP16N25E | 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN | Rochester Electronics LLC | STP16NB25 vs MTP16N25E |
IRF644 | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STP16NB25 vs IRF644 |
IRF644 | 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | STP16NB25 vs IRF644 |
BUZ255 | Power Field-Effect Transistor, 13A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | STP16NB25 vs BUZ255 |
IRF644PBF | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | STP16NB25 vs IRF644PBF |
IRF644 | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | STP16NB25 vs IRF644 |
MTP16N25E | 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | STP16NB25 vs MTP16N25E |
IRF644 | 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | STP16NB25 vs IRF644 |
IRF644 | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | STP16NB25 vs IRF644 |