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Transistors / Power Field-Effect Transistors / STP18N60DM2
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STP18N60DM2 by: STMicroelectronics

N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package

Part Details for STP18N60DM2 by STMicroelectronics

Overview of STP18N60DM2 by STMicroelectronics

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Price & Stock for STP18N60DM2

Part # Distributor Description Stock Price Buy
DISTI # 497-STP18N60DM2-ND
DigiKey MOSFET N-CH 600V 12A TO220 Min Qty: 1 Lead time: 16 Weeks Container: Tube 920
In Stock
  • 1 $2.6100
  • 50 $2.0972
  • 100 $1.7255
  • 500 $1.4600
  • 1,000 $1.2388
  • 2,000 $1.1769
  • 5,000 $1.1326
$1.1326 / $2.6100 Buy Now
DISTI # STP18N60DM2
Avnet Americas N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STP18N60DM2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.3010
  • 2,000 $1.2747
  • 4,000 $1.2484
  • 6,000 $1.2222
  • 8,000 $1.1959
  • 10,000 $1.1696
  • 100,000 $1.1433
$1.1433 / $1.3010 Buy Now
DISTI # 511-STP18N60DM2
Mouser Electronics MOSFET N-channel 600 V, 0.260 Ohm typ 12 A MDmesh DM2 Power MOSFET RoHS: Compliant 1461
  • 1 $2.6100
  • 10 $2.1000
  • 100 $1.7300
  • 250 $1.6000
  • 500 $1.4500
  • 1,000 $1.2300
  • 2,000 $1.1700
  • 5,000 $1.1300
$1.1300 / $2.6100 Buy Now
STMicroelectronics N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 1461
  • 1 $2.5600
  • 10 $2.0600
  • 100 $1.7000
  • 250 $1.5700
  • 500 $1.4200
$1.4200 / $2.5600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.2200
  • 200 $1.1800
  • 750 $1.1500
  • 1,250 $1.1400
  • 2,500 $1.1000
$1.1000 / $1.2200 Buy Now
DISTI # STP18N60DM2
Avnet Americas N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STP18N60DM2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.3010
  • 2,000 $1.2747
  • 4,000 $1.2484
  • 6,000 $1.2222
  • 8,000 $1.1959
  • 10,000 $1.1696
  • 100,000 $1.1433
$1.1433 / $1.3010 Buy Now
DISTI # STP18N60DM2
TME Transistor: N-MOSFET, MDmesh™ DM2, unipolar, 600V, 7.6A, Idm: 48A Min Qty: 1 0
  • 1 $2.5000
  • 5 $2.2400
  • 25 $1.9900
  • 100 $1.7800
  • 500 $1.6600
$1.6600 / $2.5000 RFQ
DISTI # STP18N60DM2
Avnet Americas N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STP18N60DM2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.3010
  • 2,000 $1.2747
  • 4,000 $1.2484
  • 6,000 $1.2222
  • 8,000 $1.1959
  • 10,000 $1.1696
  • 100,000 $1.1433
$1.1433 / $1.3010 Buy Now
ComSIT USA N-CHANNEL 600 V, 0.260 OHM TYP, 12 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE Power Field-Effect Transistor, 12A I(D), 600V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Europe - 1000
RFQ
DISTI # STP18N60DM2
Avnet Silica N-channel MDmesh >350 V to 700 V (Alt: STP18N60DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
DISTI # STP18N60DM2
EBV Elektronik N-channel MDmesh >350 V to 700 V (Alt: STP18N60DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2531109
Farnell MOSFET, N-CH, 600V, 12A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1 $2.3477
  • 10 $1.7608
  • 100 $1.4111
  • 250 $1.3237
  • 500 $1.2363
  • 1,000 $0.9616
$0.9616 / $2.3477 Buy Now

Part Details for STP18N60DM2

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STP18N60DM2 Part Data Attributes

Parametric Data
STP18N60DM2 STMicroelectronics
Buy Now Datasheet
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STP18N60DM2 STMicroelectronics N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-220,3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 380 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.295 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 48 A
Surface Mount YES
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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