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N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-13882-5-ND
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DigiKey | MOSFET N-CH 600V 13A TO220 Min Qty: 1 Lead time: 42 Weeks Container: Tube |
174 In Stock |
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$3.2360 / $4.7600 | Buy Now |
DISTI #
STP18NM60ND
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Avnet Americas | Trans MOSFET N-CH 600V 13A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP18NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ | |
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Future Electronics | N-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 200 Package Multiple: 1000 Container: Tube | 200Tube |
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$4.0000 | Buy Now |
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Bristol Electronics | 150 |
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RFQ | ||
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Quest Components | 120 |
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$2.8860 / $4.6800 | Buy Now | |
DISTI #
STP18NM60ND
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Avnet Americas | Trans MOSFET N-CH 600V 13A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP18NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
|
RFQ | |
DISTI #
STP18NM60ND
|
Avnet Americas | Trans MOSFET N-CH 600V 13A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP18NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
|
RFQ | |
DISTI #
STP18NM60ND
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EBV Elektronik | Trans MOSFET N-CH 600V 13A 3-Pin TO-220 Tube (Alt: STP18NM60ND) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 5 Weeks, 6 Days | EBV - 0 |
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Buy Now |
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STP18NM60ND
STMicroelectronics
Buy Now
Datasheet
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STP18NM60ND
STMicroelectronics
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 187 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.29 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 52 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP18NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP18NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MME60R290PRH | Power Field-Effect Transistor, | MagnaChip Semiconductor Ltd | STP18NM60ND vs MME60R290PRH |
STB18NM60ND | N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package | STMicroelectronics | STP18NM60ND vs STB18NM60ND |