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Part Details for STP20NM60 by STMicroelectronics
Results Overview of STP20NM60 by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP20NM60 Information
STP20NM60 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP20NM60
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
01X0055
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Newark | Power Mosfet, N Channel, 20 A, 600 V, 290 Mohm, 30 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STP20NM60 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 3228 |
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$3.2100 / $4.2500 | Buy Now |
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DISTI #
STP20NM60
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Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP20NM60) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$2.7033 / $2.8723 | Buy Now |
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STMicroelectronics | N-Channel 600V - 0.25Ohm - 20A - TO-220 MDmesh™, POWER MOSFET RoHS: Compliant Min Qty: 1 | 560 |
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$3.0200 / $5.6500 | Buy Now |
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Bristol Electronics | 27 |
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RFQ | ||
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Bristol Electronics | 2 |
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RFQ | ||
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DISTI #
STP20NM60
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TME | Transistor: N-MOSFET, unipolar, 600V, 12.6A, Idm: 80A, 192W, TO220-3 Min Qty: 1 | 0 |
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$1.8400 / $2.7500 | RFQ |
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DISTI #
STP20NM60
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Avnet Silica | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: STP20NM60) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | Silica - 850 |
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Buy Now | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 20 |
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$5.0000 / $7.6900 | Buy Now |
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DISTI #
STP20NM60
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EBV Elektronik | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: STP20NM60) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 600V 20A 0.2910V10A 192W 3V250uA 1 N-channel TO-220 MOSFETs ROHS | 24 |
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$2.3287 / $2.9431 | Buy Now |
Part Details for STP20NM60
STP20NM60 CAD Models
STP20NM60 Part Data Attributes
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STP20NM60
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP20NM60
STMicroelectronics
N-Channel 600V - 0.25Ohm - 20A - TO-220 MDmesh™ POWER MOSFET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 650 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 192 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP20NM60
This table gives cross-reference parts and alternative options found for STP20NM60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP20NM60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP20NM60 vs IPB80N06S2LH5ATMA1 |
| STP9NK65Z | STMicroelectronics | $0.7819 | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STP20NM60 vs STP9NK65Z |
| NDP606BE | Texas Instruments | Check for Price | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STP20NM60 vs NDP606BE |
| IXFH12N100F | IXYS Corporation | $9.3389 | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | STP20NM60 vs IXFH12N100F |
| IRFS730B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STP20NM60 vs IRFS730B |
| IXFP3N80 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220, 3 PIN | STP20NM60 vs IXFP3N80 |
| NDB605AL | Texas Instruments | Check for Price | 48A, 50V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP20NM60 vs NDB605AL |
| PHD11N03LT | NXP Semiconductors | Check for Price | 10.3A, 30V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3 | STP20NM60 vs PHD11N03LT |
| FDD14AN06LA0 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9.5A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | STP20NM60 vs FDD14AN06LA0 |
| PHB87N03LT118 | NXP Semiconductors | Check for Price | 75A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET | STP20NM60 vs PHB87N03LT118 |