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Transistors / Power Field-Effect Transistors / STP24N60M2
Datasheets
STP24N60M2 by: STMicroelectronics

N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220 package

Part Details for STP24N60M2 by STMicroelectronics

Results Overview of STP24N60M2 by STMicroelectronics

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

STP24N60M2 Information

STP24N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP24N60M2

Part # Distributor Description Stock Price Buy
DISTI # 45AC7710
Newark Mosfet, N-Ch, 600V, 18A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STP24N60M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 307
  • 1 $3.0900
  • 10 $2.0200
  • 100 $1.8200
  • 500 $1.6700
  • 1,000 $1.5100
  • 3,000 $1.4700
$1.4700 / $3.0900 Buy Now
DISTI # STP24N60M2
Avnet Americas Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP24N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.1750
  • 2,000 $1.1463
  • 4,000 $1.1325
  • 6,000 $1.1191
  • 8,000 $1.1059
$1.1059 / $1.1750 Buy Now
STMicroelectronics N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 2585
  • 1 $2.7800
  • 10 $1.4800
  • 100 $1.3900
  • 250 $1.3800
  • 500 $1.2300
$1.2300 / $2.7800 Buy Now
DISTI # STP24N60M2
TME Transistor: N-MOSFET, MDmesh™ || Plus, unipolar, 600V, 12A, 150W Min Qty: 1 16
  • 1 $2.7700
  • 3 $2.4900
  • 10 $2.2000
  • 50 $1.9800
  • 250 $1.8400
$1.8400 / $2.7700 Buy Now
DISTI # STP24N60M2
Avnet Silica Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube (Alt: STP24N60M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 2850
Buy Now
DISTI # C1S730200757434
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Tube 1995
  • 1 $2.7200
  • 10 $1.5000
  • 50 $1.2100
  • 100 $1.1300
  • 500 $1.0200
$1.0200 / $2.7200 Buy Now
DISTI # STP24N60M2
EBV Elektronik Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube (Alt: STP24N60M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STP24N60M2

STP24N60M2 CAD Models

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STP24N60M2 Part Data Attributes

Parametric Data
STP24N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP24N60M2 STMicroelectronics N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP24N60M2

This table gives cross-reference parts and alternative options found for STP24N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP24N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STP24NM60N STMicroelectronics $2.1349 N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220 STP24N60M2 vs STP24NM60N
STB24N60DM2 STMicroelectronics $2.4045 N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package STP24N60M2 vs STB24N60DM2
TK17E65W Toshiba America Electronic Components Check for Price Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V STP24N60M2 vs TK17E65W

STP24N60M2 Related Parts

STP24N60M2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STP24N60M2 is -40°C to 150°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.

  • The maximum current rating for the STP24N60M2 is 24A, but this can be derated based on the operating temperature and other factors.

  • Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding overcurrent protection such as a fuse or current limiter to prevent damage from excessive current.

  • Yes, the STP24N60M2 is suitable for high-frequency switching applications up to 100 kHz, but be aware of the device's switching losses and ensure proper cooling.

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