Datasheets
STP260N6F6 by: STMicroelectronics

N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package

Part Details for STP260N6F6 by STMicroelectronics

Overview of STP260N6F6 by STMicroelectronics

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Applications Energy and Power Systems Renewable Energy

Price & Stock for STP260N6F6

Part # Distributor Description Stock Price Buy
DISTI # STP260N6F6
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP260N6F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
RFQ
STMicroelectronics N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 0
  • 1 $5.6200
  • 10 $5.0500
  • 25 $4.7700
  • 100 $4.1400
  • 250 $4.1400
  • 500 $3.5300
$3.5300 / $5.6200 Buy Now
DISTI # STP260N6F6
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP260N6F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
RFQ
DISTI # 2098310
element14 Asia-Pacific MOSFET, N CH, 60V, 120A, TO 220 RoHS: Compliant Min Qty: 1 Container: Each 999
  • 1 $5.8574
  • 10 $5.1622
  • 50 $4.4596
  • 100 $4.0307
  • 500 $3.5943
  • 1,000 $3.2245
$3.2245 / $5.8574 Buy Now
DISTI # 2098310
Farnell MOSFET, N CH, 60V, 120A, TO 220 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 999
  • 1 $6.2185
  • 10 $4.9975
  • 100 $4.2548
  • 500 $3.9653
$3.9653 / $6.2185 Buy Now

Part Details for STP260N6F6

STP260N6F6 CAD Models

STP260N6F6 Part Data Attributes:

STP260N6F6 STMicroelectronics
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STP260N6F6 STMicroelectronics N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.003 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 480 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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