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N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STP260N6F6
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Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP260N6F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ | |
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STMicroelectronics | N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 0 |
|
$3.5300 / $5.6200 | Buy Now |
DISTI #
STP260N6F6
|
Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP260N6F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ | |
DISTI #
2098310
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element14 Asia-Pacific | MOSFET, N CH, 60V, 120A, TO 220 RoHS: Compliant Min Qty: 1 Container: Each | 999 |
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$3.2245 / $5.8574 | Buy Now |
DISTI #
2098310
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Farnell | MOSFET, N CH, 60V, 120A, TO 220 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 999 |
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$3.9653 / $6.2185 | Buy Now |
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STP260N6F6
STMicroelectronics
Buy Now
Datasheet
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STP260N6F6
STMicroelectronics
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.003 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |