Datasheets
STP270N8F7 by: STMicroelectronics

N-channel 80 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in TO-220 package

Part Details for STP270N8F7 by STMicroelectronics

Overview of STP270N8F7 by STMicroelectronics

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Price & Stock for STP270N8F7

Part # Distributor Description Stock Price Buy
DISTI # STP270N8F7
Avnet Americas Trans MOSFET N-CH 80V 180A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP270N8F7) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 1,000 $2.1560
  • 2,000 $2.0684
  • 4,000 $2.0435
  • 6,000 $2.0192
  • 8,000 $1.9954
$1.9954 / $2.1560 Buy Now
STMicroelectronics N-channel 80 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 937
  • 1 $4.3400
  • 10 $4.3400
  • 25 $2.4000
  • 100 $2.3100
  • 250 $2.3100
  • 500 $2.3100
$2.3100 / $4.3400 Buy Now
DISTI # STP270N8F7
TME Transistor: N-MOSFET, STripFET™ F7, unipolar, 80V, 180A, Idm: 720A Min Qty: 1 67
  • 1 $6.4000
  • 5 $5.7500
  • 25 $5.0900
  • 100 $4.5700
  • 500 $4.2600
$4.2600 / $6.4000 Buy Now
DISTI # STP270N8F7
Avnet Silica Trans MOSFET N-CH 80V 180A 3-Pin TO-220 Tube (Alt: STP270N8F7) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 900
Buy Now
DISTI # STP270N8F7
EBV Elektronik Trans MOSFET N-CH 80V 180A 3-Pin TO-220 Tube (Alt: STP270N8F7) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N CH 80V 180A TO220 73200
  • 18 $2.8260
  • 44 $2.3190
  • 67 $2.2470
  • 92 $2.1740
  • 119 $2.1020
  • 160 $1.8840
$1.8840 / $2.8260 Buy Now

Part Details for STP270N8F7

STP270N8F7 CAD Models

STP270N8F7 Part Data Attributes

STP270N8F7 STMicroelectronics
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STP270N8F7 STMicroelectronics N-channel 80 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 1160 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 315 W
Pulsed Drain Current-Max (IDM) 720 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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