Part Details for STP50N06 by STMicroelectronics
Results Overview of STP50N06 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP50N06 Information
STP50N06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP50N06
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Vyrian | Transistors | 1610 |
|
RFQ |
Part Details for STP50N06
STP50N06 CAD Models
STP50N06 Part Data Attributes
|
|
STP50N06
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP50N06
STMicroelectronics
50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STP50N06 Frequently Asked Questions (FAQ)
-
The maximum safe operating area (SOA) for the STP50N06 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STP50N06, this would typically be limited by the maximum junction temperature (Tj) of 150°C, the maximum drain-source voltage (Vds) of 60V, and the maximum drain current (Id) of 50A.
-
To calculate the power dissipation of the STP50N06, you need to know the drain-source voltage (Vds), drain current (Id), and the Rds(on) of the device. The power dissipation can be calculated using the formula: Pd = Vds x Id x Rds(on). For example, if Vds = 30V, Id = 20A, and Rds(on) = 0.015 ohms, then Pd = 30V x 20A x 0.015 ohms = 9W.
-
The recommended PCB layout for the STP50N06 involves using a copper area of at least 1 cm² under the device to ensure good heat dissipation. The drain and source pins should be connected to a low-impedance path to minimize voltage drops and ringing. A decoupling capacitor should be placed close to the device to filter out high-frequency noise. Additionally, the PCB should be designed to minimize thermal resistance and ensure good airflow around the device.
-
Yes, the STP50N06 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the gate charge. The device's datasheet provides information on the switching characteristics, and the user should ensure that the device is operated within its recommended specifications. Additionally, the user should consider the PCB layout, decoupling, and filtering to minimize high-frequency noise and ringing.
-
To protect the STP50N06 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and overcurrent protection (OCP) circuits. The OVP circuit can be implemented using a zener diode or a dedicated OVP IC, while the OCP circuit can be implemented using a current sense resistor and a comparator. Additionally, the user should ensure that the device is operated within its recommended specifications and that the PCB is designed to minimize voltage drops and ringing.