Datasheets
STP55NF06 by:

N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220 package

Part Details for STP55NF06 by STMicroelectronics

Results Overview of STP55NF06 by STMicroelectronics

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STP55NF06 Information

STP55NF06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP55NF06

Part # Distributor Description Stock Price Buy
DISTI # 72K7240
Newark Mosfet Transistor, n Channel,50 A,60 V,0.015 Ohm,10 V,3 V Rohs Compliant: Yes |Stmicroelectronics STP55NF06 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2308
  • 1 $0.9760
  • 10 $0.8770
  • 100 $0.8140
  • 500 $0.7330
  • 1,000 $0.7100
$0.7100 / $0.9760 Buy Now
DISTI # 96AC4113
Newark Ptd Low Voltage Rohs Compliant: Yes |Stmicroelectronics STP55NF06 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1.2100
  • 10 $1.0400
  • 100 $0.8710
  • 500 $0.7710
  • 1,000 $0.6750
  • 2,500 $0.6550
  • 10,000 $0.6520
$0.6520 / $1.2100 Buy Now
DISTI # STP55NF06
Avnet Americas Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP55NF06) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube 6000
  • 1 $0.3918
$0.3918 Buy Now
DISTI # 72K7240
Avnet Americas Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 72K7240) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 1138 Partner Stock
  • 1 $0.9550
  • 10 $0.8560
  • 100 $0.7930
  • 500 $0.7120
  • 1,000 $0.6890
$0.6890 / $0.9550 Buy Now
STMicroelectronics N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 8501
  • 1 $0.6200
  • 10 $0.6200
  • 100 $0.6200
  • 500 $0.5700
$0.5700 / $0.6200 Buy Now
Bristol Electronics   279
RFQ
DISTI # STP55NF06
TME Transistor: N-MOSFET, unipolar, 60V, 35A, 110W, TO220-3 Min Qty: 1 37
  • 1 $0.9210
  • 10 $0.7730
  • 50 $0.6830
  • 100 $0.6480
  • 250 $0.6070
  • 500 $0.5780
  • 1,000 $0.5510
  • 5,000 $0.4940
  • 10,000 $0.4730
$0.4730 / $0.9210 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 41
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Chip 1 Exchange INSTOCK 409
RFQ
DISTI # STP55NF06
Avnet Silica Trans MOSFET NCH 60V 50A 3Pin3Tab TO220 Tube (Alt: STP55NF06) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days Silica - 3100
Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 25
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now
DISTI # STP55NF06
EBV Elektronik Trans MOSFET NCH 60V 50A 3Pin3Tab TO220 Tube (Alt: STP55NF06) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 4050
Buy Now
LCSC 60V 50A 18m10V27.5A 110W 4V 1 N-channel TO-220 MOSFETs ROHS 177
  • 10 $0.5049
  • 50 $0.4483
  • 100 $0.3932
  • 500 $0.3596
  • 1,000 $0.3412
  • 2,000 $0.3382
  • 4,000 $0.3351
$0.3351 / $0.5049 Buy Now
Win Source Electronics Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 50A TO-220 50000
  • 155 $0.3318
  • 325 $0.3104
  • 505 $0.2997
  • 720 $0.2783
  • 935 $0.2676
  • 1,170 $0.2569
$0.2569 / $0.3318 Buy Now

Part Details for STP55NF06

STP55NF06 CAD Models

STP55NF06 Part Data Attributes

STP55NF06 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP55NF06 STMicroelectronics N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 340 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP55NF06

This table gives cross-reference parts and alternative options found for STP55NF06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP55NF06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STP55NF06 vs IPB80N06S2LH5ATMA1
NDB706AL Texas Instruments Check for Price 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB STP55NF06 vs NDB706AL
IXFK100N25 IXYS Corporation Check for Price Power Field-Effect Transistor, 100A I(D), 250V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN STP55NF06 vs IXFK100N25
MTW33N10E Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE STP55NF06 vs MTW33N10E
IXFH68N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, STP55NF06 vs IXFH68N20
STD7NK30Z STMicroelectronics Check for Price 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 STP55NF06 vs STD7NK30Z
STD12N06T4 STMicroelectronics Check for Price 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 STP55NF06 vs STD12N06T4
IRF3710HR International Rectifier Check for Price Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 STP55NF06 vs IRF3710HR
IXFX120N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 120A I(D), 200V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN STP55NF06 vs IXFX120N20
2SK3933-01SJ Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 11A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STP55NF06 vs 2SK3933-01SJ

STP55NF06 Related Parts

STP55NF06 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STP55NF06 is -40°C to 150°C.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically between 4V to 10V.

  • The maximum current rating for the STP55NF06 is 55A.

  • Use a voltage regulator to limit the voltage supply to the recommended maximum voltage, and add a current limiter or fuse to prevent overcurrent conditions.

  • Yes, the STP55NF06 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

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