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N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26M3703
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Newark | Mosfet, N Channel, 900V, 5.8A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:900V, Continuous Drain Current Id:5.8A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STP6NK90Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 3403 |
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$1.4200 / $2.9300 | Buy Now |
DISTI #
STP6NK90Z
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Avnet Americas | Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP6NK90Z) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 9800 |
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$1.2914 | Buy Now |
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STMicroelectronics | N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 | 634 |
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$1.4600 / $2.5700 | Buy Now |
DISTI #
STP6NK90Z
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TME | Transistor: N-MOSFET, unipolar, 900V, 3.65A, 140W, TO220-3, ESD Min Qty: 1 | 408 |
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$1.0000 / $2.3300 | Buy Now |
DISTI #
STP6NK90Z
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Avnet Silica | Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220 Tube (Alt: STP6NK90Z) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | Silica - 3050 |
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Buy Now | |
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CHIPMALL.COM LIMITED | 900V 5.8A 140W 1.56@10V,2.9A 4.5V@100uA 1 N-Channel TO-220 MOSFETs ROHS | 280 |
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$1.0831 / $1.6933 | Buy Now |
DISTI #
STP6NK90Z
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EBV Elektronik | Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220 Tube (Alt: STP6NK90Z) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 700 |
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Buy Now | |
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LCSC | 900V 5.8A 140W 1.5610V2.9A 4.5V100uA 1 N-channel TO-220 MOSFETs ROHS | 255 |
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$1.0380 / $1.6228 | Buy Now |
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Win Source Electronics | MOSFET N-CH 900V 5.8A TO-220 | 21000 |
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$1.1057 / $1.4281 | Buy Now |
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STP6NK90Z
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP6NK90Z
STMicroelectronics
N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-220 package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 5.8 A | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 23.2 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP6NK90Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP6NK90Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STP6NK90Z vs IPB80N06S2LH5ATMA1 |
PHD83N03LT | NXP Semiconductors | Check for Price | 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | STP6NK90Z vs PHD83N03LT |
F10F6N | Shindengen Electronic Manufacturing Co Ltd | Check for Price | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | STP6NK90Z vs F10F6N |
IXFH12N100F | IXYS Corporation | $9.3389 | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | STP6NK90Z vs IXFH12N100F |
NDP606BE | Texas Instruments | Check for Price | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STP6NK90Z vs NDP606BE |
IXFH68N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | STP6NK90Z vs IXFH68N20 |
STD7NK30Z | STMicroelectronics | Check for Price | 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STP6NK90Z vs STD7NK30Z |
MTW33N10E | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | STP6NK90Z vs MTW33N10E |
SPA16N50C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | STP6NK90Z vs SPA16N50C3 |
IRF620B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP6NK90Z vs IRF620B |