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Part Details for STP9NK60Z by STMicroelectronics
Overview of STP9NK60Z by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STP9NK60Z
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
57P2061
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Newark | Hv Mosfet Planar |Stmicroelectronics STP9NK60Z Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
497-12620-5-ND
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DigiKey | MOSFET N-CH 600V 7A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
32 In Stock |
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$1.1905 / $2.7400 | Buy Now |
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DISTI #
STP9NK60Z
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Avnet Americas | Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP9NK60Z) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
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$1.2018 / $1.3675 | Buy Now |
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DISTI #
511-STP9NK60Z
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Mouser Electronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH RoHS: Compliant | 138 |
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$1.1900 / $2.4600 | Buy Now |
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STMicroelectronics | N-CHANNEL 600V - 0.85 Ohm - 7A TO-220 Zener-Protected SuperMESH™, POWER MOSFET RoHS: Compliant Min Qty: 1 | 138 |
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$1.3800 / $2.4100 | Buy Now |
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Future Electronics | N-channel 600 V 0.95 Ohm 125 W Through Hole SuperMESH™ Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.1700 / $1.2100 | Buy Now |
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Future Electronics | N-channel 600 V 0.95 Ohm 125 W Through Hole SuperMESH™ Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.1700 / $1.2100 | Buy Now |
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Future Electronics | N-channel 600 V 0.95 Ohm 125 W Through Hole SuperMESH™ Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 20 Package Multiple: 50 Container: Tube | 0Tube |
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$1.1700 / $1.3200 | Buy Now |
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Future Electronics | N-channel 600 V 0.95 Ohm 125 W Through Hole SuperMESH™ Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.1700 / $1.3000 | Buy Now |
|
DISTI #
STP9NK60Z
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Avnet Americas | Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP9NK60Z) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
|
$1.2018 / $1.3675 | Buy Now |
Part Details for STP9NK60Z
STP9NK60Z CAD Models
STP9NK60Z Part Data Attributes
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STP9NK60Z
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP9NK60Z
STMicroelectronics
N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 235 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP9NK60Z
This table gives cross-reference parts and alternative options found for STP9NK60Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP9NK60Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 7N60G-TQ2-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STP9NK60Z vs 7N60G-TQ2-T |
| 7N60G-TQ2-R-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STP9NK60Z vs 7N60G-TQ2-R-R |
| 7N60L-T2Q-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | STP9NK60Z vs 7N60L-T2Q-T |
| STP9NK60ZFD | 7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | STP9NK60Z vs STP9NK60ZFD |
| STB9NK60Z | 7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | STP9NK60Z vs STB9NK60Z |
| 7N60ZL-TQ2-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STP9NK60Z vs 7N60ZL-TQ2-R |
| 7N65ZG-TQ2-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STP9NK60Z vs 7N65ZG-TQ2-T |
| 7N60ZG-TQ2-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STP9NK60Z vs 7N60ZG-TQ2-R |
| 7N60ZL-TA3-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | STP9NK60Z vs 7N60ZL-TA3-T |
| 7N60G-TQ2-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STP9NK60Z vs 7N60G-TQ2-R |