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Transistors / Power Field-Effect Transistors / STQ1NK60ZR-AP
Datasheets
STQ1NK60ZR-AP by: STMicroelectronics

N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package

Part Details for STQ1NK60ZR-AP by STMicroelectronics

Results Overview of STQ1NK60ZR-AP by STMicroelectronics

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STQ1NK60ZR-AP Information

STQ1NK60ZR-AP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STQ1NK60ZR-AP

Part # Distributor Description Stock Price Buy
DISTI # 33R1297
Newark Mosfet, N Channel, 600V, 300Ma, To-92, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:300Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STQ1NK60ZR-AP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 5360
  • 1 $0.6550
  • 10 $0.4880
  • 100 $0.3590
  • 500 $0.2950
  • 1,000 $0.2670
  • 4,000 $0.2260
  • 10,000 $0.2150
$0.2150 / $0.6550 Buy Now
DISTI # STQ1NK60ZR-AP
Avnet Americas Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo - Ammo Pack (Alt: STQ1NK60ZR-AP) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days Container: Ammo Pack 4000
  • 2,000 $0.1706
$0.1706 Buy Now
STMicroelectronics N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package RoHS: Compliant Min Qty: 1 3428
  • 1 $0.6100
  • 10 $0.4400
  • 100 $0.3200
  • 500 $0.2600
$0.2600 / $0.6100 Buy Now
DISTI # STQ1NK60ZR-AP
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $0.7560
  • 5 $0.3360
  • 25 $0.2940
  • 100 $0.2630
  • 500 $0.2420
  • 2,000 $0.2210
  • 4,000 $0.2100
  • 10,000 $0.1940
$0.1940 / $0.7560 RFQ
DISTI # SMC-STQ1NK60ZR-AP
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 5938
RFQ
DISTI # STQ1NK60ZR-AP
Avnet Silica Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo (Alt: STQ1NK60ZR-AP) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days Silica - 6000
Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 21685
RFQ
DISTI # STQ1NK60ZR-AP
EBV Elektronik Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo (Alt: STQ1NK60ZR-AP) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 600V 300mA 1510V0.4A 3W 4.5V50uA 1 N-channel TO-92-3 MOSFETs ROHS 1860
  • 5 $0.3260
  • 50 $0.2661
  • 150 $0.2404
  • 500 $0.2084
  • 2,000 $0.1942
  • 4,000 $0.1856
$0.1856 / $0.3260 Buy Now

Part Details for STQ1NK60ZR-AP

STQ1NK60ZR-AP CAD Models

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STQ1NK60ZR-AP Part Data Attributes

Parametric Data
STQ1NK60ZR-AP STMicroelectronics
Buy Now Datasheet
Compare Parts:
STQ1NK60ZR-AP STMicroelectronics N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-92
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 60 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.3 A
Drain-source On Resistance-Max 15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 1.2 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STQ1NK60ZR-AP

This table gives cross-reference parts and alternative options found for STQ1NK60ZR-AP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STQ1NK60ZR-AP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STQ1NK60ZR STMicroelectronics Check for Price 0.3A, 600V, 15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92, TO-92, 3 PIN STQ1NK60ZR-AP vs STQ1NK60ZR

STQ1NK60ZR-AP Related Parts

STQ1NK60ZR-AP Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STQ1NK60ZR-AP is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the STQ1NK60ZR-AP is between 10V and 15V, with a maximum voltage of 20V.

  • To protect the STQ1NK60ZR-AP from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive bag or container.

  • The maximum allowable current for the STQ1NK60ZR-AP is 60A, with a maximum pulsed current of 120A.

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