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Transistors / Power Field-Effect Transistors / STW10NK80Z
Datasheets
STW10NK80Z by: STMicroelectronics

N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package

Part Details for STW10NK80Z by STMicroelectronics

Overview of STW10NK80Z by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for STW10NK80Z

Part # Distributor Description Stock Price Buy
DISTI # 26M3810
Newark Mosfet, N, To-247, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:9A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Power Dissipation:160W Rohs Compliant: Yes |Stmicroelectronics STW10NK80Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 11
  • 1 $5.2500
  • 10 $4.8700
  • 120 $3.3500
  • 510 $3.1300
  • 1,020 $2.7000
  • 2,520 $2.4800
  • 5,010 $2.3400
$2.3400 / $5.2500 Buy Now
DISTI # 98AC2776
Newark Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STW10NK80Z RoHS: Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 510 $3.6500
  • 1,020 $3.2200
  • 2,520 $2.6000
$2.6000 / $3.6500 Buy Now
DISTI # STW10NK80Z
Avnet Americas Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW10NK80Z) RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube 1000
  • 600 $2.3644
  • 610 $2.3067
  • 1,300 $2.2789
  • 3,000 $2.2518
  • 6,000 $2.2253
$2.2253 / $2.3644 Buy Now
DISTI # 26M3810
Avnet Americas Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 26M3810) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 11 Partner Stock
  • 1 $5.2600
  • 10 $4.8900
  • 120 $3.3600
  • 510 $3.1400
  • 1,020 $2.7100
$2.7100 / $5.2600 Buy Now
STMicroelectronics N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package RoHS: Compliant Min Qty: 1 324
  • 1 $5.3200
  • 10 $5.1600
  • 25 $3.3400
  • 100 $2.7800
  • 250 $2.3700
$2.3700 / $5.3200 Buy Now
Bristol Electronics   11
RFQ
DISTI # STW10NK80Z
TME Transistor: N-MOSFET, unipolar, 800V, 6A, 160W, TO247 Min Qty: 1 182
  • 1 $4.5400
  • 10 $2.5800
  • 30 $2.3000
  • 120 $2.0300
  • 510 $1.8700
$1.8700 / $4.5400 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 102
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STW10NK80Z
Avnet Silica Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube (Alt: STW10NK80Z) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 2880
Buy Now
DISTI # STW10NK80Z
EBV Elektronik Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube (Alt: STW10NK80Z) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 800V 9A TO-247 5100
  • 6 $8.7490
  • 13 $8.1846
  • 19 $7.9024
  • 28 $7.3379
  • 36 $7.0557
  • 45 $6.7735
$6.7735 / $8.7490 Buy Now

Part Details for STW10NK80Z

STW10NK80Z CAD Models

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STW10NK80Z Part Data Attributes

Parametric Data
STW10NK80Z STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW10NK80Z STMicroelectronics N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 290 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW10NK80Z

This table gives cross-reference parts and alternative options found for STW10NK80Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW10NK80Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STW10NK80Z vs IPB80N06S2LH5ATMA1
PHD83N03LT NXP Semiconductors Check for Price 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 STW10NK80Z vs PHD83N03LT
F10F6N Shindengen Electronic Manufacturing Co Ltd Check for Price Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN STW10NK80Z vs F10F6N
IXFH12N100F IXYS Corporation $9.3389 Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 STW10NK80Z vs IXFH12N100F
NDP606BE Texas Instruments Check for Price 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STW10NK80Z vs NDP606BE
IXFH68N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, STW10NK80Z vs IXFH68N20
STD7NK30Z STMicroelectronics Check for Price 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 STW10NK80Z vs STD7NK30Z
MTW33N10E Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE STW10NK80Z vs MTW33N10E
SPA16N50C3 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN STW10NK80Z vs SPA16N50C3
IRF620B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STW10NK80Z vs IRF620B

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