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Transistors / Power Field-Effect Transistors / STW10NK80Z
Datasheets
STW10NK80Z by: STMicroelectronics

N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package

Part Details for STW10NK80Z by STMicroelectronics

Results Overview of STW10NK80Z by STMicroelectronics

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STW10NK80Z Information

STW10NK80Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW10NK80Z

Part # Distributor Description Stock Price Buy
DISTI # 26M3810
Newark Mosfet, N, To-247, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:9A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Power Dissipation:160W Rohs Compliant: Yes |Stmicroelectronics STW10NK80Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 11
  • 1 $5.8200
  • 10 $4.9100
  • 120 $3.3000
  • 510 $2.8800
  • 1,020 $2.8000
  • 2,520 $2.6100
  • 5,010 $2.4800
$2.4800 / $5.8200 Buy Now
DISTI # 98AC2776
Newark Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STW10NK80Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $5.3700
  • 10 $4.8300
  • 120 $4.0400
  • 510 $3.6500
  • 1,020 $3.2200
  • 2,520 $2.6000
$2.6000 / $5.3700 Buy Now
DISTI # STW10NK80Z
Avnet Americas Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW10NK80Z) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube 1000
  • 1 $1.9370
$1.9370 Buy Now
DISTI # 26M3810
Avnet Americas Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 26M3810) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 11 Partner Stock
  • 1 $5.3300
  • 10 $4.3200
  • 120 $3.3000
  • 510 $2.8300
  • 1,020 $2.5700
$2.5700 / $5.3300 Buy Now
STMicroelectronics N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package RoHS: Compliant Min Qty: 1 324
  • 1 $5.5800
  • 10 $5.4900
  • 25 $3.2800
  • 100 $2.7500
  • 250 $2.3600
$2.3600 / $5.5800 Buy Now
Bristol Electronics   11
RFQ
DISTI # STW10NK80Z
TME Transistor: N-MOSFET, unipolar, 800V, 6A, 160W, TO247 Min Qty: 1 181
  • 1 $4.4300
  • 10 $2.5200
  • 30 $2.2500
  • 120 $1.9800
  • 510 $1.8300
$1.8300 / $4.4300 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 102
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STW10NK80Z
Avnet Silica Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube (Alt: STW10NK80Z) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 2880
Buy Now
DISTI # STW10NK80Z
EBV Elektronik Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube (Alt: STW10NK80Z) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 1170
Buy Now
Win Source Electronics MOSFET N-CH 800V 9A TO-247 5100
  • 6 $8.7490
  • 13 $8.1846
  • 19 $7.9024
  • 28 $7.3379
  • 36 $7.0557
  • 45 $6.7735
$6.7735 / $8.7490 Buy Now

Part Details for STW10NK80Z

STW10NK80Z CAD Models

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STW10NK80Z Part Data Attributes

Parametric Data
STW10NK80Z STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW10NK80Z STMicroelectronics N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 290 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW10NK80Z

This table gives cross-reference parts and alternative options found for STW10NK80Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW10NK80Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STD2HNK60Z-1 STMicroelectronics Check for Price N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in an IPAK package STW10NK80Z vs STD2HNK60Z-1
STD12NF06L-1 STMicroelectronics $0.3997 N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package STW10NK80Z vs STD12NF06L-1
STD86N3LH5 STMicroelectronics $0.6906 Automotive-grade N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET H5 Power MOSFET in a DPAK package STW10NK80Z vs STD86N3LH5
STW52NK25Z STMicroelectronics $4.2586 N-channel 250 V, 0.033 Ohm typ., 52 A, Zener protected SuperMESH Power MOSFET in TO-247 package STW10NK80Z vs STW52NK25Z
STP9NK50Z STMicroelectronics $1.1489 N-Channel 500V - 0.72 Ohm - 7.2A TO-220 Zener-Protected SuperMESH™ Power MOSFET STW10NK80Z vs STP9NK50Z
STP45NF06 STMicroelectronics $0.7910 N-channel 60 V, 0.22 Ohm typ., 38 A, STripFET(TM) II Power MOSFET in a TO-220 package STW10NK80Z vs STP45NF06
IRFB4310ZPBF Infineon Technologies AG $1.8969 Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 STW10NK80Z vs IRFB4310ZPBF
STD16NF06T4 STMicroelectronics $0.4745 N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK STW10NK80Z vs STD16NF06T4
STW7NK90Z STMicroelectronics $1.7264 N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-247 package STW10NK80Z vs STW7NK90Z
APT50M75LLLG Microchip Technology Inc $21.2335 Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA STW10NK80Z vs APT50M75LLLG

STW10NK80Z Related Parts

STW10NK80Z Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the STW10NK80Z can withstand is 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the STW10NK80Z is between 10V and 15V, with a maximum voltage of 20V.

  • Yes, the STW10NK80Z is suitable for high-frequency switching applications, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.

  • To protect the STW10NK80Z, use a suitable overvoltage protection circuit, such as a transient voltage suppressor (TVS) or a zener diode, and implement overcurrent protection using a fuse or a current-sensing resistor.

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