Datasheets
STW14NM65N by:

12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3

Part Details for STW14NM65N by STMicroelectronics

Overview of STW14NM65N by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STW14NM65N

Part # Distributor Description Stock Price Buy
Bristol Electronics   60
RFQ
Quest Components   48
  • 1 $4.6800
  • 7 $3.4320
  • 23 $3.1200
$3.1200 / $4.6800 Buy Now
Quest Components   408
  • 1 $5.8500
  • 69 $2.7300
  • 184 $2.5350
$2.5350 / $5.8500 Buy Now

Part Details for STW14NM65N

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STW14NM65N Part Data Attributes:

STW14NM65N STMicroelectronics
Buy Now Datasheet
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STW14NM65N STMicroelectronics 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW14NM65N

This table gives cross-reference parts and alternative options found for STW14NM65N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW14NM65N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPI65R380C6XKSA1 Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG STW14NM65N vs IPI65R380C6XKSA1
IPP65R380C6XKSA1 Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW14NM65N vs IPP65R380C6XKSA1
SIHP12N65E-GE3 Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies STW14NM65N vs SIHP12N65E-GE3
STI14NM65N 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics STW14NM65N vs STI14NM65N
STW11NM65N 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB, ROHS COMPLIANT, TO-247, 3 PIN STMicroelectronics STW14NM65N vs STW11NM65N
IPP65R380C6 Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG STW14NM65N vs IPP65R380C6
STB14NM65N 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics STW14NM65N vs STB14NM65N
STP11NM65N N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package STMicroelectronics STW14NM65N vs STP11NM65N
SSF11NS65U Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Suzhou Good-Ark Electronics Co Ltd STW14NM65N vs SSF11NS65U
LSE11N65E Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Xi’an Lonten Renewable Energy Technology Inc STW14NM65N vs LSE11N65E

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