Part Details for STW14NM65N by STMicroelectronics
Overview of STW14NM65N by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STW14NM65N
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 60 |
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RFQ | ||
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Quest Components | 48 |
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$3.1200 / $4.6800 | Buy Now | |
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Quest Components | 408 |
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$2.5350 / $5.8500 | Buy Now |
Part Details for STW14NM65N
STW14NM65N CAD Models
STW14NM65N Part Data Attributes:
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STW14NM65N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW14NM65N
STMicroelectronics
12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STW14NM65N
This table gives cross-reference parts and alternative options found for STW14NM65N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW14NM65N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPI65R380C6XKSA1 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | STW14NM65N vs IPI65R380C6XKSA1 |
IPP65R380C6XKSA1 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STW14NM65N vs IPP65R380C6XKSA1 |
SIHP12N65E-GE3 | Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | STW14NM65N vs SIHP12N65E-GE3 |
STI14NM65N | 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | STW14NM65N vs STI14NM65N |
STW11NM65N | 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB, ROHS COMPLIANT, TO-247, 3 PIN | STMicroelectronics | STW14NM65N vs STW11NM65N |
IPP65R380C6 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | STW14NM65N vs IPP65R380C6 |
STB14NM65N | 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | STW14NM65N vs STB14NM65N |
STP11NM65N | N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package | STMicroelectronics | STW14NM65N vs STP11NM65N |
SSF11NS65U | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | STW14NM65N vs SSF11NS65U |
LSE11N65E | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN | Xi’an Lonten Renewable Energy Technology Inc | STW14NM65N vs LSE11N65E |