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Part Details for STW18N60M2 by STMicroelectronics
Overview of STW18N60M2 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STW18N60M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STW18N60M2
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Avnet Americas | Trans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW18N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$1.1588 / $1.2312 | Buy Now |
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STMicroelectronics | N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 | 642 |
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$1.2400 / $2.6600 | Buy Now |
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DISTI #
STW18N60M2
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TME | Transistor: N-MOSFET, MDmesh™ || Plus, unipolar, 650V, 8A, 110W Min Qty: 1 | 0 |
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$1.5500 / $2.0800 | RFQ |
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ComSIT USA | N CHANNEL 600 V, 0.255 OHM TYP., 13 A MDMESH M2 POWER MOSFET Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant |
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RFQ | |
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DISTI #
STW18N60M2
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Avnet Silica | Trans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube (Alt: STW18N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 1200 |
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Buy Now | |
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DISTI #
STW18N60M2
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EBV Elektronik | Trans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube (Alt: STW18N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | EBV - 3780 |
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Buy Now |
Part Details for STW18N60M2
STW18N60M2 CAD Models
STW18N60M2 Part Data Attributes
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STW18N60M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW18N60M2
STMicroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 135 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW18N60M2
This table gives cross-reference parts and alternative options found for STW18N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW18N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TK14G65W5 | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | STW18N60M2 vs TK14G65W5 |
| TK14N65W5 | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | STW18N60M2 vs TK14N65W5 |
| SIHD14N60E-GE3 | Vishay Intertechnologies | $1.5686 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | STW18N60M2 vs SIHD14N60E-GE3 |