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Transistors / Power Field-Effect Transistors / STW18N60M2
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STW18N60M2 by: STMicroelectronics

N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package

Part Details for STW18N60M2 by STMicroelectronics

Overview of STW18N60M2 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for STW18N60M2

Part # Distributor Description Stock Price Buy
DISTI # 41Y6021
Newark Hv Mosfet Mdmesh |Stmicroelectronics STW18N60M2 Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-15284-5-ND
DigiKey MOSFET N-CH 600V 13A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube 421
In Stock
  • 1 $2.7200
  • 30 $2.1537
  • 120 $1.8460
  • 510 $1.6409
  • 1,020 $1.4050
  • 2,010 $1.3230
  • 5,010 $1.2692
$1.2692 / $2.7200 Buy Now
DISTI # STW18N60M2
Avnet Americas Trans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW18N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $1.5079
  • 1,200 $1.4774
  • 2,400 $1.4469
  • 3,600 $1.4165
  • 4,800 $1.3860
  • 6,000 $1.3556
  • 60,000 $1.3251
$1.3251 / $1.5079 Buy Now
DISTI # 511-STW18N60M2
Mouser Electronics MOSFET N-channel 600 V, 0.255 Ohm typ 13 A MDmesh M2 Power MOSFET in TO-247 package RoHS: Compliant 25
  • 1 $2.7200
  • 25 $2.1600
  • 100 $1.8500
  • 250 $1.7100
  • 600 $1.5000
  • 1,200 $1.3300
$1.3300 / $2.7200 Buy Now
STMicroelectronics N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 25
  • 1 $2.6700
  • 10 $2.6700
  • 25 $2.1200
  • 100 $1.8100
  • 250 $1.7200
$1.7200 / $2.6700 Buy Now
Future Electronics N-Channel 600 V 0.28 Ω 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.4500
  • 120 $1.4100
  • 450 $1.3700
  • 900 $1.3500
  • 2,250 $1.3000
$1.3000 / $1.4500 Buy Now
Future Electronics N-Channel 600 V 0.28 Ω 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.4500
  • 120 $1.4100
  • 450 $1.3700
  • 900 $1.3500
  • 2,250 $1.3000
$1.3000 / $1.4500 Buy Now
Future Electronics N-Channel 600 V 0.28 Ω 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.4500
  • 120 $1.4100
  • 450 $1.3700
  • 900 $1.3500
  • 2,250 $1.3000
$1.3000 / $1.4500 Buy Now
Future Electronics N-Channel 600 V 0.28 Ω 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Container: Tube 0
Tube
  • 30 $1.4500
  • 120 $1.4100
  • 450 $1.3700
  • 900 $1.3500
  • 2,250 $1.3000
$1.3000 / $1.4500 Buy Now
DISTI # STW18N60M2
Avnet Americas Trans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW18N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $1.5079
  • 1,200 $1.4774
  • 2,400 $1.4469
  • 3,600 $1.4165
  • 4,800 $1.3860
  • 6,000 $1.3556
  • 60,000 $1.3251
$1.3251 / $1.5079 Buy Now
DISTI # STW18N60M2
TME Transistor: N-MOSFET, MDmesh™ || Plus, unipolar, 650V, 8A, 110W Min Qty: 1 0
  • 1 $2.1300
  • 3 $1.8800
  • 10 $1.7000
  • 30 $1.5800
$1.5800 / $2.1300 RFQ
DISTI # STW18N60M2
Avnet Americas Trans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW18N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $1.5079
  • 1,200 $1.4774
  • 2,400 $1.4469
  • 3,600 $1.4165
  • 4,800 $1.3860
  • 6,000 $1.3556
  • 60,000 $1.3251
$1.3251 / $1.5079 Buy Now
ComSIT USA N CHANNEL 600 V, 0.255 OHM TYP., 13 A MDMESH M2 POWER MOSFET Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant Europe - 600
RFQ
DISTI # STW18N60M2
Avnet Silica Trans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube (Alt: STW18N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
DISTI # STW18N60M2
EBV Elektronik Trans MOSFET N-CH 650V 13A 3-Pin TO-247 Tube (Alt: STW18N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2784048
Farnell MOSFET, N-CH, 600V, 13A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1 $4.1335
  • 10 $3.1470
  • 100 $2.7224
  • 250 $2.5850
  • 500 $2.3103
  • 1,000 $2.2104
$2.2104 / $4.1335 Buy Now

Part Details for STW18N60M2

STW18N60M2 CAD Models

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STW18N60M2 Part Data Attributes

Parametric Data
STW18N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW18N60M2 STMicroelectronics N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 135 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 52 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW18N60M2

This table gives cross-reference parts and alternative options found for STW18N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW18N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TK14E65W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components STW18N60M2 vs TK14E65W5
TK14C65W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components STW18N60M2 vs TK14C65W5
STP18N60M2 N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220 package STMicroelectronics STW18N60M2 vs STP18N60M2
STI18N60M2 N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in I2PAK package STMicroelectronics STW18N60M2 vs STI18N60M2
IXKH13N60C5 Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation STW18N60M2 vs IXKH13N60C5
SIHD14N60E-GE3 Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Vishay Intertechnologies STW18N60M2 vs SIHD14N60E-GE3
IXKH13N60C5 Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Littelfuse Inc STW18N60M2 vs IXKH13N60C5
IXKP13N60C5 Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Littelfuse Inc STW18N60M2 vs IXKP13N60C5
IPB60R280C6 Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Infineon Technologies AG STW18N60M2 vs IPB60R280C6
TK14G65W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components STW18N60M2 vs TK14G65W5

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