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Transistors / Power Field-Effect Transistors / STW28N60DM2
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STW28N60DM2 by: STMicroelectronics

N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package

Part Details for STW28N60DM2 by STMicroelectronics

Overview of STW28N60DM2 by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for STW28N60DM2

Part # Distributor Description Stock Price Buy
DISTI # 74Y7931
Newark Hv Mosfet Mdmesh |Stmicroelectronics STW28N60DM2 Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-16350-5-ND
DigiKey MOSFET N-CH 600V 21A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube 596
In Stock
  • 1 $4.0600
  • 30 $3.2150
  • 120 $2.7557
  • 510 $2.4495
  • 1,020 $2.0974
  • 2,010 $1.9749
  • 5,010 $1.8947
$1.8947 / $4.0600 Buy Now
DISTI # STW28N60DM2
Avnet Americas N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STW28N60DM2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $2.2510
  • 1,200 $2.2055
  • 2,400 $2.1600
  • 3,600 $2.1145
  • 4,800 $2.0691
  • 6,000 $2.0236
  • 60,000 $1.9781
$1.9781 / $2.2510 Buy Now
DISTI # 511-STW28N60DM2
Mouser Electronics MOSFET N-channel 600 V, 0.13 Ohm typ 21 A MDmesh DM2 Power MOSFET in TO-247 package RoHS: Compliant 595
  • 1 $4.1500
  • 25 $3.4800
  • 100 $2.8200
  • 600 $2.0900
  • 1,200 $1.9700
  • 3,000 $1.8900
$1.8900 / $4.1500 Buy Now
STMicroelectronics N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package RoHS: Compliant Min Qty: 1 595
  • 1 $4.0700
  • 10 $4.0700
  • 25 $3.4100
  • 100 $2.7600
  • 250 $2.7600
$2.7600 / $4.0700 Buy Now
Future Electronics STW28N60 Series 600 V 21 A 0.16 Ohm Through Hole N-Ch Power MOSFET - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.0100
  • 1,200 $1.9800
  • 1,800 $1.9600
  • 2,400 $1.9400
$1.9400 / $2.0100 Buy Now
Future Electronics STW28N60 Series 600 V 21 A 0.16 Ohm Through Hole N-Ch Power MOSFET - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Container: Reel 0
Reel
  • 600 $2.0100
  • 1,200 $1.9800
  • 1,800 $1.9600
  • 2,400 $1.9400
$1.9400 / $2.0100 Buy Now
Future Electronics STW28N60 Series 600 V 21 A 0.16 Ohm Through Hole N-Ch Power MOSFET - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $2.2000
  • 30 $2.1500
  • 125 $2.0800
  • 300 $2.0400
  • 1,250 $1.9400
$1.9400 / $2.2000 Buy Now
DISTI # STW28N60DM2
Avnet Americas N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STW28N60DM2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $2.2510
  • 1,200 $2.2055
  • 2,400 $2.1600
  • 3,600 $2.1145
  • 4,800 $2.0691
  • 6,000 $2.0236
  • 60,000 $1.9781
$1.9781 / $2.2510 Buy Now
DISTI # STW28N60DM2
TME Transistor: N-MOSFET, MDmesh™ DM2, unipolar, 650V, 14A, Idm: 84A Min Qty: 1 0
  • 1 $3.4700
  • 3 $3.1300
  • 10 $2.7600
  • 30 $2.4800
$2.4800 / $3.4700 RFQ
DISTI # STW28N60DM2
Avnet Americas N-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STW28N60DM2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $2.2510
  • 1,200 $2.2055
  • 2,400 $2.1600
  • 3,600 $2.1145
  • 4,800 $2.0691
  • 6,000 $2.0236
  • 60,000 $1.9781
$1.9781 / $2.2510 Buy Now
DISTI # STW28N60DM2
Avnet Silica N-channel MDmesh >350 V to 700 V (Alt: STW28N60DM2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 3 Days Silica - 390
Buy Now
DISTI # STW28N60DM2
EBV Elektronik N-channel MDmesh >350 V to 700 V (Alt: STW28N60DM2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2531116
Farnell MOSFET, N-CH, 600V, 21A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1 $5.0878
  • 10 $3.6808
  • 100 $3.5049
  • 250 $3.3165
  • 500 $2.9773
  • 1,000 $2.9145
$2.9145 / $5.0878 Buy Now

Part Details for STW28N60DM2

STW28N60DM2 CAD Models

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STW28N60DM2 Part Data Attributes

Parametric Data
STW28N60DM2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW28N60DM2 STMicroelectronics N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for STW28N60DM2

This table gives cross-reference parts and alternative options found for STW28N60DM2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW28N60DM2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SFP9610 Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STW28N60DM2 vs SFP9610
2SK3298 7.5A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN Renesas Electronics Corporation STW28N60DM2 vs 2SK3298
IRF9632 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor STW28N60DM2 vs IRF9632
SML50B26FR3 Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD TT Electronics Resistors STW28N60DM2 vs SML50B26FR3
STW15NM60N 14A, 600V, 0.299ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 STMicroelectronics STW28N60DM2 vs STW15NM60N
NDP7050LJ69Z Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STW28N60DM2 vs NDP7050LJ69Z
SML50B26F Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD TT Electronics Resistors STW28N60DM2 vs SML50B26F
TK20C60W TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components STW28N60DM2 vs TK20C60W
SMP25N05 25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments STW28N60DM2 vs SMP25N05
STW14NM50FD 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA, ROHS COMPLIANT PACKAGE-3 STMicroelectronics STW28N60DM2 vs STW14NM50FD

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