Datasheets
STW28N60M2 by: STMicroelectronics

N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package

Part Details for STW28N60M2 by STMicroelectronics

Overview of STW28N60M2 by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for STW28N60M2

Part # Distributor Description Stock Price Buy
DISTI # 45AC7784
Newark Mosfet, N-Ch, 600V, 22A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:22A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STW28N60M2 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $4.1700
  • 10 $3.7700
  • 25 $3.3800
  • 60 $3.1700
  • 120 $2.9500
  • 270 $2.6700
$2.6700 / $4.1700 Buy Now
DISTI # 497-14292-5-ND
DigiKey MOSFET N-CH 600V 24A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube Temporarily Out of Stock
  • 1 $3.5100
  • 30 $2.7847
  • 120 $2.3868
  • 510 $2.1216
  • 1,020 $1.8167
  • 2,010 $1.7106
  • 5,010 $1.6411
$1.6411 / $3.5100 Buy Now
DISTI # STW28N60M2
Avnet Americas Trans MOSFET N-CH 650V 22A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW28N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $1.9497
  • 1,200 $1.9103
  • 2,400 $1.8709
  • 3,600 $1.8315
  • 4,800 $1.7921
  • 6,000 $1.7527
  • 60,000 $1.7133
$1.7133 / $1.9497 Buy Now
DISTI # 511-STW28N60M2
Mouser Electronics MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 RoHS: Compliant 3
  • 1 $3.5900
  • 10 $3.5100
  • 25 $2.7900
  • 100 $2.3900
  • 250 $2.1300
  • 600 $1.8200
$1.8200 / $3.5900 Buy Now
STMicroelectronics N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package RoHS: Compliant Min Qty: 1 3
  • 1 $3.5200
  • 10 $3.4400
  • 25 $2.7300
  • 100 $2.3400
  • 250 $2.0900
$2.0900 / $3.5200 Buy Now
Future Electronics Single N-Channel 600 V 170 W 36 nC Silicon Through Hole Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.8700
  • 120 $1.8100
  • 450 $1.7600
  • 750 $1.7400
  • 1,500 $1.6800
$1.6800 / $1.8700 Buy Now
Future Electronics Single N-Channel 600 V 170 W 36 nC Silicon Through Hole Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.8700
  • 120 $1.8100
  • 450 $1.7600
  • 750 $1.7400
  • 1,500 $1.6800
$1.6800 / $1.8700 Buy Now
Future Electronics Single N-Channel 600 V 170 W 36 nC Silicon Through Hole Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.7600
  • 1,200 $1.7400
  • 1,800 $1.7200
  • 2,400 $1.7100
  • 3,000 $1.6800
$1.6800 / $1.7600 Buy Now
Future Electronics Single N-Channel 600 V 170 W 36 nC Silicon Through Hole Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.7600
  • 1,200 $1.7400
  • 1,800 $1.7200
  • 2,400 $1.7100
  • 3,000 $1.6800
$1.6800 / $1.7600 Buy Now
Bristol Electronics   Min Qty: 2 30
  • 2 $2.8000
  • 10 $1.8200
  • 29 $1.4000
$1.4000 / $2.8000 Buy Now
Quest Components   24
  • 1 $3.7500
  • 4 $2.5000
  • 11 $1.8750
$1.8750 / $3.7500 Buy Now
DISTI # STW28N60M2
Avnet Americas Trans MOSFET N-CH 650V 22A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW28N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $1.9497
  • 1,200 $1.9103
  • 2,400 $1.8709
  • 3,600 $1.8315
  • 4,800 $1.7921
  • 6,000 $1.7527
  • 60,000 $1.7133
$1.7133 / $1.9497 Buy Now
DISTI # STW28N60M2
TME Transistor: N-MOSFET, MDmesh™ || Plus, unipolar, 600V, 14A, 170W Min Qty: 1 0
  • 1 $3.1700
  • 3 $2.8000
  • 10 $2.5100
  • 30 $2.3400
$2.3400 / $3.1700 RFQ
DISTI # STW28N60M2
Avnet Americas Trans MOSFET N-CH 650V 22A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW28N60M2) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $1.9497
  • 1,200 $1.9103
  • 2,400 $1.8709
  • 3,600 $1.8315
  • 4,800 $1.7921
  • 6,000 $1.7527
  • 60,000 $1.7133
$1.7133 / $1.9497 Buy Now
DISTI # STW28N60M2
Avnet Silica Trans MOSFET N-CH 650V 22A 3-Pin TO-247 Tube (Alt: STW28N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
DISTI # STW28N60M2
EBV Elektronik Trans MOSFET N-CH 650V 22A 3-Pin TO-247 Tube (Alt: STW28N60M2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2807323
element14 Asia-Pacific MOSFET, N-CH, 600V, 22A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 411
  • 1 $3.6107
  • 10 $3.0456
  • 100 $2.3118
  • 500 $1.9815
  • 1,000 $1.8714
$1.8714 / $3.6107 Buy Now
DISTI # 2807323
Farnell MOSFET, N-CH, 600V, 22A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 411
  • 1 $4.0836
  • 10 $2.8972
  • 100 $2.2104
  • 500 $1.8857
  • 1,000 $1.8482
$1.8482 / $4.0836 Buy Now

Part Details for STW28N60M2

STW28N60M2 CAD Models

STW28N60M2 Part Data Attributes

STW28N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW28N60M2 STMicroelectronics N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 350 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 88 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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