-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-247 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW3N150 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
33R1326
|
Newark | Mosfet, N Channel, 1.5Kv, 2.5A, To-247-3, Channel Type:N Channel, Drain Source Voltage Vds:1.5Kv, Continuous Drain Current Id:2.5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STW3N150 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 652 |
|
$3.3500 / $6.5900 | Buy Now |
DISTI #
STW3N150
|
Avnet Americas | Power MOSFET, N Channel, 1.5 kV, 2.5 A, 9 Ohm, TO-247, 3 Pins, Through Hole - Rail/Tube (Alt: STW3N150) RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube | 1200 |
|
$2.0675 / $2.1968 | Buy Now |
|
STMicroelectronics | N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-247 package RoHS: Compliant Min Qty: 1 | 1408 |
|
$2.2300 / $5.5900 | Buy Now |
|
Bristol Electronics | 1 |
|
RFQ | ||
DISTI #
STW3N150
|
TME | Transistor: N-MOSFET, unipolar, 1500V, 1.6A, 140W, TO247 Min Qty: 1 | 88 |
|
$2.7800 / $4.2100 | Buy Now |
|
ComSIT USA | N-channel 1500 V, 2.5 A, 6 ohm typ., PowerMESH Power MOSFET Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 , ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
DISTI #
STW3N150
|
Avnet Silica | Power MOSFET N Channel 15 kV 25 A 9 Ohm TO247 3 Pins Through Hole (Alt: STW3N150) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 5130 |
|
Buy Now | |
DISTI #
C1S730200349989
|
Chip One Stop | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant pbFree: Yes Container: Tube | 600 |
|
$2.3000 / $5.2100 | Buy Now |
DISTI #
STW3N150
|
EBV Elektronik | Power MOSFET N Channel 15 kV 25 A 9 Ohm TO247 3 Pins Through Hole (Alt: STW3N150) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | EBV - 15600 |
|
Buy Now | |
|
LCSC | 1.5kV 2.5A 140W 4V 1 N-channel TO-247-3 MOSFETs ROHS | 129 |
|
$0.9404 / $1.3991 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STW3N150
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STW3N150
STMicroelectronics
N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-247 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-247 | |
Package Description | ROHS COMPLIANT, PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 450 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1500 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 9 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |