Part Details for STW60N10 by STMicroelectronics
Overview of STW60N10 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STW60N10
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 8 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-247 | 1 |
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$10.9500 | Buy Now |
Part Details for STW60N10
STW60N10 CAD Models
STW60N10 Part Data Attributes:
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STW60N10
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW60N10
STMicroelectronics
60A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 720 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STW60N10
This table gives cross-reference parts and alternative options found for STW60N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW60N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ344 | Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Infineon Technologies AG | STW60N10 vs BUZ344 |
| IRFP150NPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | STW60N10 vs IRFP150NPBF |
| IRFP150N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | Infineon Technologies AG | STW60N10 vs IRFP150N |
| STW50N10 | 50A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | STW60N10 vs STW50N10 |
| SGSP472 | 35A, 80V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | STW60N10 vs SGSP472 |
| RFG40N10 | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Harris Semiconductor | STW60N10 vs RFG40N10 |
| IRFP150N | Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | STW60N10 vs IRFP150N |
| MTH25N08 | Power Field-Effect Transistor, 25A I(D), 80V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Motorola Semiconductor Products | STW60N10 vs MTH25N08 |
| MTH25N10 | 25A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Motorola Mobility LLC | STW60N10 vs MTH25N10 |
| RFG40N10 | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | STW60N10 vs RFG40N10 |