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Transistors Power Field-Effect Transistors SUD06N10-225L-E3

Transistors
SUD06N10-225L-E3
Description: Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3

Overview of SUD06N10-225L-E3 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
TE512S32-25LC Rochester Electronics LLC TE512S32 - Field Programmable Gate Array, CMOS, PQFP128
PCV-0-102-25L Coilcraft Inc General Purpose Inductor, 1uH, 15%, 1 Element, Ferrite-Core, ROHS COMPLIANT
PCH-27-225L Coilcraft Inc General Purpose Inductor, 2200uH, 10%, 1 Element, AXIAL LEADED, ROHS COMPLIANT

CAD Models for SUD06N10-225L-E3 by Vishay Siliconix
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Part Data Attributes for SUD06N10-225L-E3 by Vishay Siliconix
Parametric Data

SUD06N10-225L-E3
Vishay Siliconix
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TO-252
Package Description
LEAD FREE PACKAGE-3
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
6.5 A
Drain-source On Resistance-Max
0.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
8 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Element Material
SILICON
Want to compare parts?
  1. SUD06N10-225L-E3
    Vishay Siliconix
    Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
    VS

Alternate Parts for SUD06N10-225L-E3

This table gives cross-reference parts and alternative options found for SUD06N10-225L-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD06N10-225L-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFZ44ZS Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier SUD06N10-225L-E3 vs IRFZ44ZS
IRLZ44ZS Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier SUD06N10-225L-E3 vs IRLZ44ZS
IRFZ44ZSTRL Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier SUD06N10-225L-E3 vs IRFZ44ZSTRL
RF1S640SM 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC SUD06N10-225L-E3 vs RF1S640SM
RFD15N06LESM 15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC SUD06N10-225L-E3 vs RFD15N06LESM
MTB60N05HDL 60A, 50V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC SUD06N10-225L-E3 vs MTB60N05HDL
IRFZ44ZSTRR Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier SUD06N10-225L-E3 vs IRFZ44ZSTRR
IRFZ44VZS Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier SUD06N10-225L-E3 vs IRFZ44VZS
RF1S50N06LESM 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC SUD06N10-225L-E3 vs RF1S50N06LESM
RFD16N02LSM 16A, 20V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC SUD06N10-225L-E3 vs RFD16N02LSM

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