Datasheets
SUD23N06-31 by:

TRANSISTOR 21.4 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

Part Details for SUD23N06-31 by Vishay Siliconix

Overview of SUD23N06-31 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for SUD23N06-31

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SUD23N06-31 Part Data Attributes

SUD23N06-31 Vishay Siliconix
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SUD23N06-31 Vishay Siliconix TRANSISTOR 21.4 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 21.4 A
Drain-source On Resistance-Max 0.031 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SUD23N06-31

This table gives cross-reference parts and alternative options found for SUD23N06-31. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD23N06-31, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SUD23N06-31-GE3 Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD23N06-31 vs SUD23N06-31-GE3
SUD23N06-31L-E3 TRANSISTOR 23 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix SUD23N06-31 vs SUD23N06-31L-E3
SUD23N06-31 Power Field-Effect Transistor, 21.4A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD23N06-31 vs SUD23N06-31
Part Number Description Manufacturer Compare
IRFZ48STRLPBF Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SUD23N06-31 vs IRFZ48STRLPBF
IRFZ48SPBF Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SUD23N06-31 vs IRFZ48SPBF
SUD23N06-31L-E3 TRANSISTOR 23 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix SUD23N06-31 vs SUD23N06-31L-E3
SUD23N06-31-GE3 Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD23N06-31 vs SUD23N06-31-GE3
SUD23N06-31 Power Field-Effect Transistor, 21.4A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SUD23N06-31 vs SUD23N06-31
IRFZ48STRL Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SUD23N06-31 vs IRFZ48STRL
SIHFZ48S-GE3 Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 Vishay Intertechnologies SUD23N06-31 vs SIHFZ48S-GE3
IRFZ48SPBF Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier SUD23N06-31 vs IRFZ48SPBF
SUM50N06-16L-E3 Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies SUD23N06-31 vs SUM50N06-16L-E3
IRFZ48STRL Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix SUD23N06-31 vs IRFZ48STRL

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