Part Details for SUD50N03-06AP-E3 by Vishay Intertechnologies
Overview of SUD50N03-06AP-E3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SUD50N03-06AP-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55M4841
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Newark | N Channel Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1.2V, Power Dissipation:10W Rohs Compliant: Yes |Vishay SUD50N03-06AP-E3 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.0300 | Buy Now |
DISTI #
SUD50N03-06AP-E3
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Avnet Americas | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SUD50N03-06AP-E3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.6368 / $0.8090 | Buy Now |
DISTI #
781-SUD50N03-06AP-E3
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Mouser Electronics | MOSFET 30V 90A 83W RoHS: Compliant | 2891 |
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$0.6250 / $1.4900 | Buy Now |
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Future Electronics | Single N-Channel 30 V 5.7 mOhms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.6100 / $0.6450 | Buy Now |
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Future Electronics | Single N-Channel 30 V 5.7 mOhms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.6100 / $0.6450 | Buy Now |
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Bristol Electronics | 10935 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 30V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 1345 |
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$0.5719 / $1.3725 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 30V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 8748 |
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$0.6863 / $2.2875 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 30V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 664 |
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$0.9150 / $2.2875 | Buy Now |
DISTI #
SUD50N03-06AP-E3
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TTI | MOSFET 30V 90A 83W RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Americas - 2000 In Stock |
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$0.6250 / $0.6630 | Buy Now |
Part Details for SUD50N03-06AP-E3
SUD50N03-06AP-E3 CAD Models
SUD50N03-06AP-E3 Part Data Attributes
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SUD50N03-06AP-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUD50N03-06AP-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Reach Compliance Code | compliant | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 101 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0078 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SUD50N03-06AP-E3
This table gives cross-reference parts and alternative options found for SUD50N03-06AP-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD50N03-06AP-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STH8NA60FI | 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STMicroelectronics | SUD50N03-06AP-E3 vs STH8NA60FI |
SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SUD50N03-06AP-E3 vs SPP47N10 |
IXFH7N90Q | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | SUD50N03-06AP-E3 vs IXFH7N90Q |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | SUD50N03-06AP-E3 vs IXFH14N80 |
IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | SUD50N03-06AP-E3 vs IPD90N06S306ATMA1 |
STP4NK60Z | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STMicroelectronics | SUD50N03-06AP-E3 vs STP4NK60Z |
SSP10N60B | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | SUD50N03-06AP-E3 vs SSP10N60B |
STP19N06 | 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | SUD50N03-06AP-E3 vs STP19N06 |
FQPF7N20 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SUD50N03-06AP-E3 vs FQPF7N20 |
STW80NF55-06 | 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | SUD50N03-06AP-E3 vs STW80NF55-06 |