Datasheets
SUD50N04-8M8P-4GE3 by:

TRANSISTOR 14 A, 40 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

Part Details for SUD50N04-8M8P-4GE3 by Vishay Siliconix

Overview of SUD50N04-8M8P-4GE3 by Vishay Siliconix

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for SUD50N04-8M8P-4GE3

Part # Distributor Description Stock Price Buy
DISTI # SUD50N04-8M8P-4GE3CT-ND
DigiKey MOSFET N-CH 40V 14A/50A TO252 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1475
In Stock
  • 1 $1.2400
  • 10 $1.0130
  • 100 $0.7875
  • 500 $0.6675
  • 1,000 $0.5438
  • 2,500 $0.5119
  • 5,000 $0.4875
  • 12,500 $0.4650
$0.4650 / $1.2400 Buy Now
DISTI # 70459611
RS SUD50N04-8M8P-4GE3 N-channel MOSFET Transistor, 50 A, 40 V, 3-Pin TO-252 | Siliconix / Vishay SUD50N04-8M8P-4GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $1.2400
  • 25,000 $1.1800
  • 125,000 $1.1200
  • 250,000 $1.0500
$1.0500 / $1.2400 RFQ
New Advantage Corporation Single N-Channel 40 V 0.0088 Ohm 48.1 W Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 15000
  • 2,500 $0.4571
  • 15,000 $0.4267
$0.4267 / $0.4571 Buy Now

Part Details for SUD50N04-8M8P-4GE3

SUD50N04-8M8P-4GE3 CAD Models

SUD50N04-8M8P-4GE3 Part Data Attributes

SUD50N04-8M8P-4GE3 Vishay Siliconix
Buy Now Datasheet
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SUD50N04-8M8P-4GE3 Vishay Siliconix TRANSISTOR 14 A, 40 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.0088 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48.1 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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