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TRANSISTOR 14 A, 40 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SUD50N04-8M8P-4GE3CT-ND
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DigiKey | MOSFET N-CH 40V 14A/50A TO252 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1475 In Stock |
|
$0.4650 / $1.2400 | Buy Now |
DISTI #
70459611
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RS | SUD50N04-8M8P-4GE3 N-channel MOSFET Transistor, 50 A, 40 V, 3-Pin TO-252 | Siliconix / Vishay SUD50N04-8M8P-4GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$1.0500 / $1.2400 | RFQ |
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New Advantage Corporation | Single N-Channel 40 V 0.0088 Ohm 48.1 W Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 15000 |
|
$0.4267 / $0.4571 | Buy Now |
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SUD50N04-8M8P-4GE3
Vishay Siliconix
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Datasheet
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SUD50N04-8M8P-4GE3
Vishay Siliconix
TRANSISTOR 14 A, 40 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | TO-252 | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.0088 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48.1 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |