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Power Field-Effect Transistor, 110A I(D), 60V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SUM110P06-08L-E3
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Avnet Americas | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) TO-263 - Rail/Tube (Alt: SUM110P06-08L-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days Container: Tube | 1600 |
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$1.6010 / $2.0338 | Buy Now |
DISTI #
781-SUM110P06-08L-E3
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Mouser Electronics | MOSFET 60V 110A 272W 8.0mohm @ 10V RoHS: Compliant | 166931 |
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$1.9500 / $4.2600 | Buy Now |
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Future Electronics | Single P-Channel 60 V 8 mOhm 272 W Surface Mount Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 3200Reel |
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$1.4800 / $1.5500 | Buy Now |
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Future Electronics | Single P-Channel 60 V 8 mOhm 272 W Surface Mount Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 1600Reel |
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$1.6000 / $1.6500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 110A I(D), 60V, 0.008OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263 | 604 |
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$4.9035 / $9.8070 | Buy Now |
DISTI #
SUM110P06-08L-E3
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TTI | MOSFET 60V 110A 272W 8.0mohm @ 10V pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel |
Americas - 58400 In Stock |
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$1.5900 / $1.8300 | Buy Now |
DISTI #
SUM110P06-08L-E3.
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TTI | MOSFET 60V P-CHANNEL (D-S) pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Cut Tape |
Americas - 760 In Stock |
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$2.5600 | Buy Now |
DISTI #
SUM110P06-08L-E3
|
Avnet Americas | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) TO-263 - Rail/Tube (Alt: SUM110P06-08L-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days Container: Tube | 1600 |
|
$1.6010 / $2.0338 | Buy Now |
DISTI #
SUM110P06-08L-E3
|
Avnet Americas | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM110P06-08L-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$1.6010 / $2.7440 | Buy Now |
DISTI #
SUM110P06-08L-E3
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TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -60V, -110A, Idm: -200A Min Qty: 1 | 590 |
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$1.8800 / $3.5100 | Buy Now |
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SUM110P06-08L-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUM110P06-08L-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 110A I(D), 60V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 211 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 272 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |