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Transistors / Power Field-Effect Transistors / SUM45N25-58-E3
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SUM45N25-58-E3 by:

Power Field-Effect Transistor, 45A I(D), 250V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN

Part Details for SUM45N25-58-E3 by Vishay Intertechnologies

Overview of SUM45N25-58-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SUM45N25-58-E3

Part # Distributor Description Stock Price Buy
DISTI # 06J8517
Newark N Channel Mosfet, 250V, 45A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:45A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:30V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SUM45N25-58-E3 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # SUM45N25-58-E3
Avnet Americas Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM45N25-58-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 800 $3.1042
  • 1,600 $3.0046
  • 3,200 $2.9051
  • 4,800 $2.7874
  • 6,400 $2.6969
  • 8,000 $2.5702
  • 80,000 $2.4435
$2.4435 / $3.1042 Buy Now
DISTI # 781-SUM45N25-58-E3
Mouser Electronics MOSFET 250V 45A 375W 58mohm @ 10V RoHS: Compliant 725
  • 1 $4.3200
  • 10 $3.6300
  • 100 $2.9400
  • 500 $2.7800
  • 800 $2.2300
  • 2,400 $2.2000
$2.2000 / $4.3200 Buy Now
Future Electronics Single N-Channel 250 V 0.058 Ohms Surface Mount Power Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $2.1200
  • 1,600 $2.0700
$2.0700 / $2.1200 Buy Now
Quest Components 45 A, 250 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 640
  • 1 $12.0870
  • 135 $6.6479
  • 302 $6.0435
$6.0435 / $12.0870 Buy Now
DISTI # SUM45N25-58-E3
TTI MOSFET 250V 45A 375W 58mohm @ 10V pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 6400
In Stock
  • 800 $2.3500
  • 1,600 $2.3100
  • 2,400 $2.2600
$2.2600 / $2.3500 Buy Now
DISTI # SUM45N25-58-E3
Avnet Americas Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM45N25-58-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 800 $3.1042
  • 1,600 $3.0046
  • 3,200 $2.9051
  • 4,800 $2.7874
  • 6,400 $2.6969
  • 8,000 $2.5702
  • 80,000 $2.4435
$2.4435 / $3.1042 Buy Now
DISTI # SUM45N25-58-E3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 250V, 45A, Idm: 90A Min Qty: 800 0
  • 800 $2.3400
$2.3400 RFQ
DISTI # SUM45N25-58-E3
Avnet Asia Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) TO-263 (Alt: SUM45N25-58-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days 0
RFQ
Chip1Cloud MOSFET N-CH 250V 45A D2PAK 19000
RFQ
DISTI # SUM45N25-58-E3
EBV Elektronik Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) TO-263 (Alt: SUM45N25-58-E3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 1869879
element14 Asia-Pacific MOSFET,N CH,W DIODE,250V,45A,D2PAK RoHS: Compliant Min Qty: 1 Container: Each 445
  • 1 $4.5663
  • 10 $3.8348
  • 100 $3.1033
  • 500 $2.3644
  • 1,000 $2.3201
$2.3201 / $4.5663 Buy Now
DISTI # 1869879
Farnell MOSFET,N CH,W DIODE,250V,45A,D2PAK RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Each 445
  • 1 $4.8406
  • 10 $3.6492
  • 100 $2.9470
  • 500 $2.3450
  • 1,000 $2.2949
$2.2949 / $4.8406 Buy Now

Part Details for SUM45N25-58-E3

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SUM45N25-58-E3 Part Data Attributes:

Parametric Data
SUM45N25-58-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUM45N25-58-E3 Vishay Intertechnologies Power Field-Effect Transistor, 45A I(D), 250V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, TO-263, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 90 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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