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Transistors / Power Field-Effect Transistors / SUM90N10-8M2P-E3
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SUM90N10-8M2P-E3 by:

TRANSISTOR 90 A, 100 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

Part Details for SUM90N10-8M2P-E3 by Vishay Siliconix

Overview of SUM90N10-8M2P-E3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SUM90N10-8M2P-E3

Part # Distributor Description Stock Price Buy
DISTI # SUM90N10-8M2P-E3CT-ND
DigiKey MOSFET N-CH 100V 90A TO263 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5293
In Stock
  • 1 $4.2700
  • 10 $3.5890
  • 100 $2.9032
  • 800 $2.5806
  • 1,600 $2.2096
  • 2,400 $2.0806
$2.0806 / $4.2700 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 100V, 0.0082OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263 4
  • 1 $4.2075
  • 3 $2.8050
$2.8050 / $4.2075 Buy Now
New Advantage Corporation Single N-Channel 100 V 0.0082 O 97 nC Surface Mount Power Mosfet -TO-263 (D2PAK) RoHS: Compliant Min Qty: 1 Package Multiple: 800 1600
  • 800 $2.2600
  • 1,600 $2.1100
$2.1100 / $2.2600 Buy Now

Part Details for SUM90N10-8M2P-E3

SUM90N10-8M2P-E3 CAD Models

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SUM90N10-8M2P-E3 Part Data Attributes

Parametric Data
SUM90N10-8M2P-E3 Vishay Siliconix
Buy Now Datasheet
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SUM90N10-8M2P-E3 Vishay Siliconix TRANSISTOR 90 A, 100 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-263
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0082 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SUM90N10-8M2P-E3

This table gives cross-reference parts and alternative options found for SUM90N10-8M2P-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUM90N10-8M2P-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF540N Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation SUM90N10-8M2P-E3 vs IRF540N
IRF512-006 Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier SUM90N10-8M2P-E3 vs IRF512-006
IRF2807 Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG SUM90N10-8M2P-E3 vs IRF2807
AUIRF2807 Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG SUM90N10-8M2P-E3 vs AUIRF2807
IRF512 Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor SUM90N10-8M2P-E3 vs IRF512
IRF513-006 Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier SUM90N10-8M2P-E3 vs IRF513-006
IRF513-001 Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier SUM90N10-8M2P-E3 vs IRF513-001
IRF511 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor SUM90N10-8M2P-E3 vs IRF511
IRFZ48V Power Field-Effect Transistor, 72A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG SUM90N10-8M2P-E3 vs IRFZ48V
IRF511 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SUM90N10-8M2P-E3 vs IRF511

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